IRFL9014 HEXFET® Power MOSFET Surface Mount Available Tape R

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IRFL9014 HEXFET® Power MOSFET Surface Mount Available Tape R

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90863A
IRFL9014
HEXFET® Power MOSFET
Surface Mount Available Tape Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease Paralleling
VDSS -60V RDS(on) 0.50
-1.8A
Description
Third Generation HEXFETs from International Rectifier provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOT-223 package designed surface-mount using vapor phase, infra red, wave soldering techniques. unique package design allows easy automatic pick-andplace with other SOIC packages added advantage improved thermal performance enlarged heatsinking. Power dissipation grreater than 1.25W possible typical surface mount application.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldewring Temperature, seconds
Max.
-1.8 -1.1 0.025 0.017 -/+20 -1.8 0.31 -4.5
(1.6mm from case)
Units
W/°C
dv/dt TSTG
V/ns
Thermal Resistance
Parameter
Junction-to-PCB Junction-to-Ambient. (PCB Mount)**
Typ.
Max.
Units
°C/W
When mounted SQUARE (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994.
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2/1/99
IRFL9014
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions 250µA -0.059 V/°C Reference 25°C, -2.0 0.50 -4.0 -100 -500 -100 -10V, 1.1A VGS, 250µA -25V, 1.1A -60V, -48V, 125°C -20V =-6.7A =-48V -10V, Fig. -30V -6.7A Fig. Between lead, 6mm(0.25in) from package center contact. 1.0MHz, Fig.
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol -1.8 showing integral reverse junction diode. -5.5 25°C, -1.8A, 25°C, =-6.7A 0.096 0.19 di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
-6.7A, di/dt 90A/µs, V(BR)DSS,
150°C
VDD=-25V, starting 25°C,
-1.8A. (See Figure
Pulse width 300µs; duty cycle
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IRFL9014
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IRFL9014
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IRFL9014
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IRFL9014
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IRFL9014
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
AFER CODE PART NUMBER
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IRFL9014
Tape Reel Information
SOT-223 Outline
NOTES 2,50
5.40 1.90
330.00 (13.000)
0.00
(.72
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IRFL9014 HEXFET® Power MOSFET Surface Mount Available Tape R

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