POWER MOSFET SURFACE MOUNT(SMD-1) IRFN250 IRFN250 JANTX2N722

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POWER MOSFET SURFACE MOUNT(SMD-1) IRFN250 IRFN250 JANTX2N722

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91549C
POWER MOSFET SURFACE MOUNT(SMD-1)
IRFN250
IRFN250 JANTX2N7225U JANTXV2N7225U REF:MIL-PRF-19500/592 200V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
RDS(on)
0.100
27.4A
HEXFET® MOSFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
SMD-1
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 27.4 27.4 300(for seconds) (Typical)
Units
W/°C
V/ns
footnotes refer last page
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1/28/01
IRFN250
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.29 3500 0.100 0.105 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 10V, 27.4A VGS, 250µA 15V, VDS= 160V ,VGS=0V 160V, 125°C -20V =10V, 27.4A 100V 100V, 27.4A, =10V, 2.35
IGSS IGSS td(on) td(off) Ciss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Measured from center drain center source pad. 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
27.4
Test Conditions
25°C, 27.4A, 25°C, 27.4A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
0.83
°C/W
Test Conditions
Soldered copper-clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRFN250
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFN250
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFN250
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFN250
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFN250
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 1.3mH Peak 27.4A,
27.4A, di/dt 190A/µs,
200V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions SMD-1
ASSIGNMENTS DRAIN GATE SOURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 01/02
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POWER MOSFET SURFACE MOUNT(SMD-1) IRFN250 IRFN250 JANTX2N722

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