HEXFET® Power MOSFET IRLML5103 VDSS -30V Generation Tec

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HEXFET® Power MOSFET IRLML5103 VDSS -30V Generation Tec

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91260E
HEXFET® Power MOSFET
IRLML5103
VDSS -30V
Generation Technology Ultra On-Resistance P-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching
RDS(on) 0.60
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. customized leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
-0.76 -0.61 -4.8 -5.0
Units
mW/°C
V/ns
Thermal Resistance
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
Units
°C/W
04/29/03
IRLML5103
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) IDSS d(on) d(off) Ciss Coss
Min. -1.0 0.44
Typ. -0.029 0.52
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA 0.60 -10V, -0.60A -4.5V, -0.30A VGS, -250µA -10V, -0.30A -1.0 -24V, -24V, 125°C -100 -20V -0.60A 0.78 -24V -10V, Fig. -15V -0.60A Fig. -25V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -0.54 -4.8 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -0.60A, 25°C, -0.60A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle
-0.60A, di/dt 110A/µs, V(BR)DSS, Surface mounted FR-4 board, 5sec.
150°C
IRLML5103
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
-3.0V 20µs PULSE WIDTH 25°C
-3.0V
20µs PULSE WIDTH 150°C
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
25°C 150°C
DS(on) Drain-to-Source Resistance (Normalized)
-0.60A
Drain-to-Source Current
-10V 20µs PULSE WIDTH
-10V
-VGS Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRLML5103
-VGS Gate-to-Source Voltage
1MHz SHORTED Ciss
-0.60A -24V -15V
Capacitance (pF)
Coss
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
150°C
100µs
25°C
25°C 150°C Single Pulse
10ms
-VSD Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRLML5103
-10V
-10V
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
-3mA
Current Sampling Resistors
Gate Charge Test Circuit
1000
Thermal Response thJA
0.50 0.20 0.10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D.U.T.
td(on) d(off)
10b. Switching Time Waveforms
Rectangular Pulse Duration (sec)
D.U.T.
IRLML5103
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
VGS*
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity P-Channel P-Channel Driver P-Channel Measurements
Driver Gate Drive P.W. Period P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD]
5.0V Logic Level Drive Devices P-Channel HEXFETS
IRLML5103
Package Outline
SOT-23 Outline Dimensions shown millimeters (inches)
LEAD ASSIGNMENTS GATE SOURCE DRAIN
0.20 .008
INCHES .032 .001 .015 .004 .105 .044 .004 .021 .006 .120
MILLIMETERS 0.82 0.02 0.38 0.10 2.67 1.11 0.10 0.54 0.15 3.05
.0750 BASIC .0375 BASIC .047 .083 .005 .055 .098 .010
1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 1.40 2.50 0.25
0.008 (.003)
MINIMUM RECOMMENDED FOOTPRINT 0.10 (.004) 0.80 .031 0.90 .035 2.00 .079
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS INCLUDE MOLD FLASH.
0.95 .037
IRLML5103
Part Marking Information
SOT-23
Notes part marking information applies devices produced before 02/26/2001
EXAMPLE: IRLML6302 (1-26) PRECEDED DIGIT CALENDAR YEAR YEAR PART NUMBER 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
DATE CODE
PART NUMBER CODE REFERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
(27-52) PRECEDED LETT YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
CODE EXAMPLES: 9503 9532
Notes part marking information applies devices produced after 02/26/2001
(1-26) PRECE DIGIT CALENDAR YEAR YEAR WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
PART NUMBER
CODE
PART NUMBER CODE REFERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
(27-52) PRECEDED LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
IRLML5103
Tape Reel Information
SOT-23 Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154 .062 .060 1.32 .051 1.12 .045
1.85 .072 1.65 .065
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/03

HEXFET® Power MOSFET IRLML5103 VDSS -30V Generation Tec

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