IRF7606 HEXFET® Power MOSFET Generation Technology Ultra On-

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRF7606 HEXFET® Power MOSFET Generation Technology Ultra On-

Datasheet Thumbnail

Top Searches for this datasheet

91264E
IRF7606
HEXFET® Power MOSFET
Generation Technology Ultra On-Resistance P-Channel MOSFET Very Small SOIC Package Profile (<1.1mm) Available Tape Reel Fast Switching
VDSS -30V
RDS(on) 0.09
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro8 package, with half footprint area standard SO-8, provides smallest footprint available SOIC outline. This makes Micro8 ideal device applications where printed circuit board space premium. profile (<1.1mm) Micro8 will allow easily into extremely thin application environments such portable electronics PCMCIA cards.
View
Micro8
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain-Source Voltage Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldering Temperature, seconds
Max.
-3.6 -2.9 -5.0 (1.6mm from case)
Units
mW/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
Units
°C/W
Micro8 Data Sheets reflect improved Thermal Resistance, Power Current -Handling Ratings- effective only product marked with Date Code later
www.irf.com
07/22/02
IRF7606
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -1.0 Typ. -0.024 0.075 0.130 Max. Units Conditions 250µA V/°C Reference 25°C, -1mA 0.09 10V, -2.4A 0.15 -4.5V, -1.2A VGS, -250µA -10V, -1.2A -1.0 -24V, -24V, 125°C -100 -20V -2.4A -24V -10V, Fig. -10V -2.4A -25V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units -1.8 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -2.4A, 25°C, -2.4A di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board,
10sec.
-2.4A, di/dt -130A/µs, V(BR)DSS,
150°C
www.irf.com
IRF7606
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
-3.0V
20µs PULSE WIDTH 25°C
-3.0V 20µs PULSE WIDTH 150°C
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
-ISD Reverse Drain Current
25°C
150°C
150°C 25°C
-10V 20µs PULSE WIDTH
-VGS Gate-to-Source Voltage
-VSD Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
www.irf.com
IRF7606
DS(on) Drain-to-Source Resistance (Normalized)
-2.7A
RDS(on) Drain-to-Source Resistance
-4.5V
-10V
-10V
Junction Temperature (°C)
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
0.14
RDS(on) Drain-to-Source Resistance
0.12
0.10
0.08
-3.6A
0.06
0.04
Gate-to-Source Voltage
Typical On-Resistance Gate Voltage
www.irf.com
IRF7606
1000
-VGS Gate-to-Source Voltage
1MHz SHORTED
-2.7A -24V -15V
Capacitance (pF)
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.00001 Notes: Duty factor Peak thJA 0.01
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
IRF7606
Package Outline
Micro8 Outline Dimensions shown millimeters (inches)
LEAD ASSIGNMENTS 0.25 (.010) SINGLE DUAL
INCHES
MILLIMETERS
.036 .004 .010 .005 .116
.044 .008 .014 .007 .120
0.91 0.10 0.25 0.13 2.95
1.11 0.20 0.36 0.18 3.05
.0256 BASIC .0128 BASIC .116 .188 .016 .120 .198 .026
0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 3.05 5.03 0.66
0.08 (.003) 0.10 (.004)
RECOMMENDED FOOTPRINT 1.04 .041 0.38 .015
3.20 .126
4.24 5.28 .167 .208
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS INCLUDE MOLD FLASH.
0.65 .0256
www.irf.com
IRF7606
Micro8 Part Marking Information (Old)
Note: This part marking information applies devices produced before 2/26/2001.
EXAMPLE THIS IRF7501
DATE CODE LAST DIGIT YEAR WEEK
7501
PART NUMBER
Micro8 Part Marking Information (New)
Note: This part marking information applies devices produced after 2/26/2001.
(1-26) PRECEDED LAST DIGIT CALENDAR YEAR YEAR WORK WEEK
EXAMPLE: THIS 7501
CODE (XX)
DATE CODE (YW) YEAR WEEK
DATE CODE EXAMPLES
2001 2002 2003 1994 1995 1996 1997 1998 1999 2000
PART NUMBER
9503 9532
(27-52) PRECEDED YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK
www.irf.com
IRF7606
Tape Reel Information
Micro8 Dimensions shown millimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: OUTLINE CONFORMS EIA-481 EIA-541. CONTROLLING DIMENSION MILLIMETER.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified Consumer market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.07/02
www.irf.com

IRF7606 HEXFET® Power MOSFET Generation Technology Ultra On-

Top Searches for this datasheet

Other recent searches