IRF7406 HEXFET® Power MOSFET Generation Technology Ultra On-
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91247D
IRF7406
HEXFET® Power MOSFET
Generation Technology Ultra On-Resistance P-Channel Mosfet Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching Description
VDSS -30V RDS(on) 0.045
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve lowest possible on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
SO-8
Absolute Maximum Ratings
Parameter
25°C 25°C 70°C 25°C dv/dt TSTG Sec. Pulsed Drain Current, -10V Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
-6.7 -5.8 -3.7 0.02 -5.0
Units
W/°C V/ns
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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06/12/03
IRF7406
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -250µA -0.020 V/°C Reference 25°C, -1mA 0.045 -10V, -2.8A 0.070 -4.5V, -2.4A -1.0 VGS, -250µA -15V, -2.8A -1.0 -24V, -24V, 125°C -100 -20V -2.8A -2.4V -10V, Fig. -15V -2.8A 5.3, Fig. 1100
Between lead center contact -25V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units -3.1 -1.0
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -2.0A, 25°C, -2.8A di/dt 100A/µs
Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle
-2.8A, di/dt 90A/µs, V(BR)DSS,
150°C
Surface mounted FR-4 board, 10sec.
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IRF7406
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
-4.5V
-4.5V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
-4.7A
Drain-to-Source Current
25°C
150°C
-15V 20µs PULSE WIDTH
-10V
-VGS Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF7406
2500
2000
-VGS Gate-to-Source Voltage
1MHz SHORTED
-2.8A -24V
Capacitance (pF)
1500
Ciss Coss
1000
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
150°C
25°C
Single Pulse
10ms
-VSD Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF7406
D.U.T.
Drain Current
-10V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Ambient Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7406
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Charge
Current Sampling Resistors
12a. Basic Gate Charge Waveform
12b. Gate Charge Test Circuit
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-10V
D.U.T.
IRF7406
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
VGS*
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity P-Channel P-Channel Driver P-Channel Measurements
Driver Gate Drive P.W. Period P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
5.0V Logic Level Drive Devices P-Channel HEXFETS
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IRF7406
Package Outline
SO-8 Outline Dimensions shown millimeters (inches)
INCHES .0532 .0040 .014 .0075 .189 .150 .0688 .0098 .018 .0098 .196 .157
MILLIMETERS 1.35 0.10 0.36 0.19 4.80 3.81 1.75 0.25 0.46 0.25 4.98 3.99
0.25 (.010)
.050 BASIC .025 BASIC .2284 .011 0.16 .2440 .019 .050
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 6.20 0.48 1.27
0.10 (.004)
0.25 (.010) NOTES:
RECOMMENDED FOOTPRINT 0.72 (.028
DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS SHOWN MILLIMETERS (INCHES). OUTLINE CONFORMS JEDEC OUTLINE MS-012AA. DIMENSION DOES INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS EXCEED 0.25 (.006). DIMENSIONS LENGTH LEAD SOLDERING SUBSTRATE. 1.27 .050 6.46 .255
1.78 (.070)
Part Marking Information
SO-8
EXAMPLE: IRF7101 (MOS FET) CODE (YWW) LAST DIGIT YEAR WEEK CODE PART NUMBER
ERNAT IONAL RECTIFIER LOGO
XXXX F7101
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IRF7406
Tape Reel Information
SO-8 Dimensions shown millimeters (inches)
1.85 (.072) 4.10 (.161) 1.65 (.065) 3.90 (.154) 1.60 (.062) 1.50 (.059) 0.35 (.013) 0.25 (.010)
TERMINATION NUMBER
2.05 (.080) 1.95 (.077)
5.55 (.218) 5.45 (.215)
5.30 (.208) 5.10 (.201)
12.30 (.484) 11.70 (.461)
FEED DIRECTION
8.10 (.318) 7.90 (.311) 6.50 (.255) 6.30 (.248)
2.60 (.102) 1.50 (.059) 2.20 (.086) 2.00 (.079)
13.20 (.519) 12.80 (.504)
15.40 (.607) 11.90 (.469)
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES: CONFORMS EIA-481-1 INCLUDES FLANGE DISTORTION OUTER EDGE DIMENSIONS MEASURED CONTROLLING DIMENSION METRIC
18.40 (.724) 14.40 (.566) 12.40 (.448)
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 06/03
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