POWER MOSFET SURFACE MOUNT(SMD-1) IRFN150 IRFN150 JANTX2N722

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

POWER MOSFET SURFACE MOUNT(SMD-1) IRFN150 IRFN150 JANTX2N722

Datasheet Thumbnail

Top Searches for this datasheet

91547C
POWER MOSFET SURFACE MOUNT(SMD-1)
IRFN150
IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
RDS(on)
0.07
HEXFET® MOSFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
SMD-1
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 300(for seconds) (Typical)
Units
W/°C
V/ns
footnotes refer last page
www.irf.com
1/28/02
IRFN150
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.13 3700 1100 0.07 0.081 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 10V, VGS, 250µA 15V, VDS= ,VGS=0V 80V, 125°C -20V =10V, 50V, 34A, =10V, 2.35
IGSS IGSS td(on) td(off) Ciss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Measured from center drain center source pad. 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 34A, 25°C, 34A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
0.83
°C/W
Test Conditions
Soldered copper-clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
www.irf.com
IRFN150
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRFN150
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRFN150
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRFN150
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRFN150
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 0.26mH Peak 34A,
34A, di/dt 200A/µs,
100V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions SMD-1
ASSIGNMENTS DRAIN GATE SOURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 01/02
www.irf.com

POWER MOSFET SURFACE MOUNT(SMD-1) IRFN150 IRFN150 JANTX2N722

Top Searches for this datasheet

Other recent searches