POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 IRFN054 60V, N-CH

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POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 IRFN054 60V, N-CH

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91543B
POWER MOSFET SURFACE MOUNT (SMD-1)
IRFN054
IRFN054 60V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
RDS(on)
0.020
55A*
HEXFET® MOSFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
SMD-1
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Surface mount Light-weight
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 300(for seconds) (Typical)
Units
W/°C
V/ns
*Current limited package footnotes refer last page
www.irf.com
2/6/02
IRFN054
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.68 0.020 0.031 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 10V, VGS, 250µA 15V, VDS= ,VGS=0V 48V, 125°C -20V =10V, 30V, 55A, =10V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source pad. 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1660 2000
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Units
Test Conditions
25°C, 55A, 25°C, 55A, di/dt 100A/µs
Forward Turn-On Time *Current limited package
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC Junction-to-Case
Units
0.83
°C/W
Test Conditions
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRFN054
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFN054
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFN054
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFN054
Peak
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFN054
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 0.3mH Peak 55A,
55A, di/dt 200A/µs,
60V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions SMD-1
ASSIGNMENTS DRAIN GATE SOURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/02
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POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 IRFN054 60V, N-CH

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