IRF5806 HEXFET® Power MOSFET Ultra On-Resistance P-Channel M

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRF5806 HEXFET® Power MOSFET Ultra On-Resistance P-Channel M

Datasheet Thumbnail

Top Searches for this datasheet

93997A
IRF5806
HEXFET® Power MOSFET
Ultra On-Resistance P-Channel MOSFET Surface Mount Available Tape Reel Gate Charge
VDSS
-20V
RDS(on)
86m@VGS -4.5V 147m@VGS -2.5V
-4.0A -3.0A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit provides designer with extremely efficient device battery load management applications. TSOP-6 package with customized leadframe produces HEXFET® power MOSFET with RDS(on) less than similar size SOT-23. This package ideal applications where printed circuit board space premium. It's unique thermal design RDS(on) reduction enables current-handling increase nearly 300% compared SOT-23.
View
TSOP-6
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C TSTG Drain-Source Voltage Continuous Drain Current, -4.5V Continuous Drain Current, -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction Storage Temperature Range
Max.
-4.0 -3.3 -16.5 0.02
Units
W/°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
www.irf.com
1/22/03
IRF5806
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. -0.45
Typ. 0.011 47.1 67.5
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA -4.5V, -4.0A -2.5V, -3.0A -1.2 VGS, -250µA -10V, -4.0A -16V, -16V, 70°C -100 -12V 11.4 -4.0A -16V -4.5V -10V, -4.5V -1.0A -15V 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units -2.0 -16.5 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -2.0A, 25°C, -2.0A di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
When mounted inch square Copper board, 10sec.
Pulse width 300µs; duty cycle
www.irf.com
IRF5806
Drain-to-Source Current
Drain-to-Source Current
-7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V
-7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
-4.0A
Drain-to-Source Current
-15V 20µs PULSE WIDTH
-4.5V
-VGS Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRF5806
1000
-VGS Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-4.0A
=-16V
Capacitance (pF)
Ciss
Coss Crss
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us
10ms
Single Pulse
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRF5806
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
IRF5806
Drain-to-Source Resistance
RDS(on) Drain-to -Source Resistance
0.20
0.20
0.16
0.15
0.12
-2.5V
0.10
-4.0A
0.08 -4.5V 0.04
0.05
0.00
0.00 Drain Current
Gate -Source Voltage
Typical On-Resistance Gate Voltage
Typical On-Resistance Drain Current
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Current Sampling Resistors
Charge
14a. Basic Gate Charge Waveform
14b. Gate Charge Test Circuit
www.irf.com
D.U.T.
IRF5806
-VGS(th)
-250µA
Power
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000
Temperature
Time (sec)
Typical Vgs(th) Junction Temperature
Typical Power Time
www.irf.com
IRF5806
TSOP-6 Package Outline
TSOP-6 Tape Reel Information
www.irf.com
IRF5806
TSOP-6 Part Marking Information
Notes part marking information applies devices produced before 02/26/2001
EXAMPLE: I3443DV (1-26) PRECEDED LAST DIGIT CALENDAR YEAR YEAR PART NUMBER DATE CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 WORK WEEK
WAFER NUMBER CODE
PART NUMBER CODE REFERENCE: SI3443DV IRF5800 IRF5850 IRF5851 IRF5852 IRF5805 IRF5806 DATE CODE EXAMPLES: 9603 9632 (27-52) PRECEDED LETTER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 WORK WEEK
Notes part marking information applies devices produced after 02/26/2001
(1-26) PRECEDED LAST DIGIT CALENDAR YEAR YEAR YEAR WEEK PART NUMBER 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 WORK WEEK
CODE
PART NUMB CODE REFERENCE: SI3443DV IRF5800 IRF5850 IRF5851 IRF5852 IRF5805 IRF5806 IRF5810 IRF5804 IRF5803 IRF5820
(27-52) PRECEDED LETTER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 WORK WEEK
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice. 1/03
www.irf.com

IRF5806 HEXFET® Power MOSFET Ultra On-Resistance P-Channel M

Top Searches for this datasheet

Other recent searches