IRFBC40S/L HEXFET® Power MOSFET Surface Mount (IRFBC40S) Low

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IRFBC40S/L HEXFET® Power MOSFET Surface Mount (IRFBC40S) Low

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91016A
IRFBC40S/L
HEXFET® Power MOSFET
Surface Mount (IRFBC40S) Low-profile through-hole (IRFBC40L) Available Tape Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS 600V RDS(on)
6.2A
Description
Third generation HEXFETs from international Rectifier provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. D2Pak surface mount power package capable ofthe accommodatingdie sizes HEX-4. provides highest power capability lowest possible onresistance existing surface mount package. D2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application. through-hole version (IRFBC40L) available low-profile applications.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient Mounted,steady-state)**
Typ.
Max.
Units
°C/W
9/27/01
IRFBC40S/L
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS td(on) d(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Max. Units Conditions 250µA V/°C Reference 25°C, =1mA =10V, 3.7A VGS, 250µA 100V, 3.7A 600V, 480V, 125°C -100 -20V 6.2A 3600V 10V, Fig. 300V 6.2A Fig. Between lead, center contact 1300 1.0MHz, Fig.
Typ. 0.70
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 6.2A, 25°C, 6.2A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig. =50V, starting 25°C, =27mH 6.2A. (See Figure
Pulse width 300µs; duty cycle Uses IRFBC40 data test conditions
6.2A, di/dt 80A/µs, V(BR)DSS
150°C When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994.
IRFBC40S/L
IRFBC40S/L
IRFBC40S/L
IRFBC40S/L
IRFBC40S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices 14.For N-Channel HEXFETS
IRFBC40S/L
D2Pak Package Outline
10.54 .415) 10.29 .405) 1.40 (.055) MAX.
4.69 (.185) 4.20 (.165)
1.32 (.052) 1.22 (.048)
10.16 (.400)
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350)
1.78 (.070) 1.27 (.050)
1.40 (.055) 1.14 (.045) 5.08 .200)
0.93 (.037) 0.69 (.027) 0.25 (.010)
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
MINIMUM RECO ENDED RINT 11.43 (.450)
OLDE NING LERA NCING 14.5M, 1982. LLING DIME NSIO INCH. SINK LEAD DIMEN SION INCLUDE BURRS.
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2.54 (.100)
Part Marking Information
D2Pak
NATION TIFIER SEMBLY CODE
PART MBER 9246
DATE CODE (YYW YEAR
IRFBC40S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRFBC40S/L
Tape Reel Information
D2Pak
(.60 (.60
.079
(14.
-418 LLIN ILLIM
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice 9/01

IRFBC40S/L HEXFET® Power MOSFET Surface Mount (IRFBC40S) Low

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