RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN9150 JA

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN9150 JA

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90885E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN9150 JANSR2N7422U 100V, P-CHANNEL
REF: MIL-PRF-19500/662 Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on) 0.080 0.080 -22A -22A Part Number JANSR2N7422U JANSF2N7422U
International Rectifier's RADHard HEXFETtechnology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
SMD-1
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range PCKG Mounting Surface Temp. Weight footnotes refer last page (typical)
Pre-Irradiation
Units
W/°C
V/ns
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02/20/03
IRHN9150, JANSR2N7422U
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.093 V/°C
Test Conditions
=-1.0mA Reference 25°C, -1.0mA -12V, -14A -12V, -22A VGS, -1.0mA >-15V, -14A VDS= -80V ,VGS=0V -80V, 125°C -20V =-12V, -22A -50V -50V, -22A, =-12V, 2.35
0.080 0.085 -4.0 -250 -100
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source -25V 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4300 1100
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-3.0
Test Conditions
25°C, -22A, 25°C, -22A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
0.83
Units
°C/W
Test Conditions
soldered 1"sq. copper-clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHN9150, JANSR2N7422U
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-1) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units
Test Conditions
-1.0mA -1.0mA -20V VDS=-80V, -12V, =-14A -12V, =-14A -22A
-100 -2.0
-4.0 -100 0.081 0.080 -3.0
-100 -2.0
-5.0 -100 0.081 0.080
Part number IRHN9150 (JANSR2N7422U) Part numbers IRHN93150 (JANSF2N7422U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
-120 -100
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHN9150, JANSR2N7422U
Pre-Irradiation
Drain-to-Source Current
-5.0V
20µs PULSE WIDTH
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
-22A
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
VGS, Gate-to-Source Voltage
Typical Transfer Characteristics
Junction Temperature
Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
IRHN9150, JANSR2N7422U
7000
-VGS, Gate-to-Source Voltage
6000
1MHz Ciss SHORTED Crss Coss
-22A
Capacitance (pF)
5000
Ciss
-80V -50V -20V
4000
3000
2000
1000
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
OPERATION THIS AREA LIMITED
DS(on)
-ISD Reverse Drain Current
Drain Current
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHN9150, JANSR2N7422U
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current CaseTemperature
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN9150, JANSR2N7422U
1200
Single Pulse Avalanche Energy (mJ)
1000
BOTTOM -9.8A -14A -22A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRHN9150, JANSR2N7422U
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. -25V, starting 25°C, 2.1mH Peak -22A, -12V -22A, di/dt -450A/µs, -100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-1
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/03
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN9150 JA

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