RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Part Numbe

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Part Numbe

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90881C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.30 0.30 -6.5A -6.5A
IRHE9130 100V, P-CHANNEL
REF: MIL-PRF-19500/630 RAD-Hard HEXFET MOSFET TECHNOLOGY
Part Number JANSR2N7389U JANSF2N7389U
International Rectifier's RAD-HardHEXFET® MOSFET technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight footnotes refer last page -6.5 -4.1 -6.5 0.42 (Typical)
Pre-Irradiation
Units
W/°C
V/ns
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2/20/03
IRHE9130
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.112 0.30 0.35 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -4.1A -12V, -6.5A VGS, -1.0mA -15V, -4.1A VDS= -80V,VGS=0V -80V 125°C -20V -12V, -6.5A -50V -50V, -6.5A, -12V,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source -25V 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-6.5 -3.0 0.74
Test Conditions
25°C, -6.5A, 25°C, -6.5A, di/dt -100A/µs -25V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC Board
Units
°C/W
Test Conditions
Solder copper clad Board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHE9130
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (LCC-18) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units
Test Conditions
-1.0mA VDS, -1.0mA -20V =-80V, -12V, =-4.1A -12V, =-4.1A -6.5A
-100
-100 0.259 0.30 -3.0
-100 -2.0
-5.0 -100 0.259 0.30 -3.0
Part number IRHE9130 (JANSR2N7389U) Part number IRHE93130 (JANSF2N7389U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
MeV/(mg/cm2)) 36.8 59.8 Energy (MeV) Range VDS(V) (µm) @VGS @VGS @VGS =10V VGS=15V @VGS =20V -100 -100 -100 -100 -100 32.6
-120 -100
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHE9130
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-6.5A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHE9130
2000
-VGS Gate-to-Source Voltage
Capacitance (pF)
1500
1MHz Ciss SHORTED Crss Coss
-6.5
Ciss
=-80V =-50V =-20V
1000
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHE9130
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHE9130
Single Pulse Avalanche Energy (mJ)
-2.9A -4.1A BOTTOM -6.5A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRHE9130
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. -25V, starting 25°C, 7.8mH Peak -6.5A, -12V -6.5A, di/dt -430A/µs, -100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions LCC-18
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/03
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Part Numbe

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