RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) Part Number
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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)
Part Number Radiation Level DS(on) IRH9150 100K Rads (Si) 0.075 IRH93150 300K Rads (Si) 0.075
IRH9150 100V, P-CHANNEL
Hard HEXFET TECHNOLOGY
-22A -22A
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
TO-204AE
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) 11.5 (Typical
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02/18/03
IRH9150
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.093 0.075 0.080 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -14A -12V, -22A VGS, -1.0mA -15V, -14A VDS= -80V ,VGS=0V -80V, 125°C -20V =-12V, -22A -50V =-50V, -22A =-12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in from package) Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Drain
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4300 1100
-25V 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-3.0
Test Conditions
25°C, -22A, 25°C, -22A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.83 0.12
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRH9150
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units
Test Conditions
-1.0mA VDS, -1.0mA -20V VDS=-80V, -12V, =-14A -22A
-100 -2.0
-4.0 -100 0.075 -3.0
-100 -2.0
-5.0 -100 0.085 -3.0
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 59.9 Energy (MeV) Range (µm) @VGS=0V 32.8 -100 -100 @VGS=5V -100 -100 S(V) @VGS=10V -100 @VGS=15V @VGS=20V
-120 -100
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRH9150
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
20µs PULSE WIDTH
-5.0V
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
-22A
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
-50V 20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Typical Transfer Characteristics
-12V
Junction Temperature
Normalized On-Resistance Temperature
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Pre-Irradiation
IRH9150
7000
-VGS Gate-to-Source Voltage
6000
Ciss Crss Coss 1MHz SHORTED
-22A
Capacitance (pF)
5000
Ciss
-80V -50V -20V
4000
3000
2000
1000
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
OPERATION THIS AREA LIMITED
DS(on)
-ISD Reverse Drain Current
Drain Current
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRH9150
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak ZthJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRH9150
1200
Single Pulse Avalanche Energy (mJ)
-2GS
1000
-9.8A -14A BOTTOM -22A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Current Sampling Resistors
Charge
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRH9150
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. -25V, starting 25°C, L=2.06mH Peak -22A, =-12V -22A, di/dt -450A/µs, -100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-204AE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/03
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