RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Part Numb
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Part Number Radiation Level IRHNJ597034 100K Rads (Si) IRHNJ593034 300K Rads (Si) RDS(on) 0.06 0.06 -22A -22A
IRHNJ597034 60V, P-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier's technology provides high performance power MOSFETs space applications. These devices have been characterized Single Event Effects (SEE) with useful performance (MeV/(mg/cm2)). combination RDS(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened Ultra RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Current limited package footnotes refer last page -22* -1.4 Typical
Pre-Irradiation
Units
W/°C
V/ns
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02/13/03
IRHNJ597034
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-2.0
Units
0.063 0.06 -4.0 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -16A
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
VGS, -1.0mA -25V, -16A VDS= -48V ,VGS=0V -48V, =125°C -20V =-12V, -22A -30V -30V, -22A, =-12V, 7.5,
Measured from center drain center source -25V 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1540
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-22* -5.0
Test Conditions
25°C, -22A, 25°C, =-22A, di/dt -100A/µs -25V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Current limited package
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
1.67
Units
°C/W
Test Conditions
soldered square copper-clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHNJ597034
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-0.5) Diode Forward Voltage 100K Rads(Si)1 -2.0 -4.0 -100 0.06 0.06 -5.0 300KRads(Si)2 -2.0 -5.0 -100 0.06 0.06 -5.0 Units
Test Conditions
-1.0mA VDS, -1.0mA =-20V =-48V, -12V, =-16A -12V, =-16A -22A
Part number IRHNJ597034 Part number IRHNJ593034
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
(MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 33.1 30.5 28.4
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHNJ597034
Pre-Irradiation
Drain-to-Source Current
-5.0V
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V 6.0V BOTTOM -5.0V
-5.0V
20µs PULSE WIDTH 25°C -VDS Drain-to-Source Voltage
20µs PULSE WIDTH 150°C -VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
25°C 150°C
DS(on) Drain-to-Source Resistance (Normalized)
-22A
-25V 20µs PULSE WIDTH Gate-to-Source Voltage
-12V
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHNJ597034
2500
Ciss SHORTED
-22A
Gate-to-Source Voltage
2000
Capacitance (pF)
Ciss
1500
Crss Coss
VDS= -48V VDS= -30V VDS= -12V
Coss
1000
Crss
-VDS, Drain-to-Source Voltage Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
Drain-to-Source Current
OPERATION THIS AREA LIMITED DS(on)
25°C
150°C
25°C 150°C Single Pulse
100µs 10ms
1000
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHNJ597034
Pre-Irradiation
LIMITED PACKAGE
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNJ597034
Single Pulse Avalanche Energy (mJ)
BOTTOM -10A -14A -22A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
V(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRHNJ597034
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=0.44mH Peak 22A, -12V 22A, di/dt 290A/µs, 60V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-0.5
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/03
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