IRLL110 HEXFET® Power MOSFET Surface Mount Available Tape Re

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IRLL110 HEXFET® Power MOSFET Surface Mount Available Tape Re

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90869A
IRLL110
HEXFET® Power MOSFET
Surface Mount Available Tape Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified VGS= Fast Switching
VDSS 100V RDS(on) 0.54
1.5A
Description
Third Generation HEXFETs from International Rectifier provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOT-223 package designed surface-mount using vapor phase, infra red, wave soldering techniques. unique package design allows easy automatic pick-andplace with other SOIC packages added advantage improved thermal performance enlarged heatsinking. Power dissipation grreater than 1.25W possible typical surface mount application.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldewring Temperature, seconds
Max.
0.93 0.025 0.017 -/+10 0.31
(1.6mm from case)
Units
W/°C
dv/dt TSTG
V/ns
Thermal Resistance
Parameter
Junction-to-PCB Junction-to-Ambient. (PCB Mount)**
Typ.
Max.
Units
°C/W
When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994.
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IRLL110
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. Typ. Max. Units Conditions 250µA 0.12 V/°C Reference 25°C, 0.54 5.0V, 0.90A 0.76 4.0V, 0.75A 250µA 0.57 25V, 0.90 100V, 80V, 125°C -100 -10V 5.6A 5.0V, Fig. 5.6A Between lead, 6mm(0.25in) from package center contact. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 1.5A, 25°C, 5.6A 0.50 0.65 di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
5.6A, di/dt 75A/µs, V(BR)DSS,
150°C
VDD=25V, starting 25°C,
1.5A. (See Figure
Pulse width 300µs; duty cycle
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IRLL110
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IRLL110
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IRLL110
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IRLL110
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IRLL110
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
XXXXXX
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IRLL110
Tape Reel Information
SOT-223 Outline
NOTES
330.00 (13.000)
0.00
(.72
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IRLL110 HEXFET® Power MOSFET Surface Mount Available Tape Re

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