RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

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91273C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40 0.40 0.40 0.40
IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
Part Number 9.4A JANSR2N7381 9.4A JANSF227381 9.4A JANSG2N7381 9.4A JANSH2N7381
TO-257AA
International Rectifier's RADHard technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rds(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters. HEXFET®
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) (Typical
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12/17/01
IRHY7230CM
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.23 0.40 0.49 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, =6.0A 12V, 9.4A VGS, 1.0mA 15V, 6.0A VDS= 160V ,VGS=0V 160V, 125°C -20V =12V, =9.4A 100V 100V, =9.4A =12V,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/0.25in. from package) source lead (6mm/0.25in. from package)
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 9.4A, 25°C, 9.4A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJA Junction-to-Case Junction-to-Ambient
Units
1.67
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHY7230CM
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=160V, 12V, =6.0A 12V, =6.0A 9.4A
-100 0.40 0.40
1.25
-100 0.53 0.53
Part number IRHY7230CM (JANSR2N7381) Part numbers IRHY3230CM, IRHY4230CM, IRHY8230CM (JANSF2N7381, JANSG2N7381 JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 Energy (MeV) Range (µm) @VGS=0V VDS(V) @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHY7230CM
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
9.4A
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHY7230CM
2000
Gate-to-Source Voltage
Capacitance (pF)
1500
1MHz Ciss SHORTED Crss Coss
9.4A
160V 100V
1000
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
10us
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHY7230CM
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: Duty factor Peak thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHY7230CM
Single Pulse Avalanche Energy (mJ)
4.2A 5.9A BOTTOM 9.4A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHY7230CM
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 50V, starting 25°C, L=3.40mH Peak 9.4A, =12V 9.4A, di/dt 660A/µs, 200V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-257AA
10.66 [.420] 10.42 [.410] 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527]
16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410]
15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100]
0.88 [.035] 0.64 [.025]
IGNMENT
3.05 [.120]
0.50 [.020]
DIMENS IONING OLERANCING Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS HOWN MILLIMET [INCHES LINE CONFORMS JEDEC LINE O-257AA.
DRAIN OURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 12/01
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

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