RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Part Number
|
|
|
Top Searches for this datasheet
91798A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) DS(on) 0.070 0.070 0.070 0.070
IRHNB7260 200V, N-CHANNEL
Hard HEXFET TECHNOLOGY
SMD-3
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight footnotes refer last page (for Sec.) (Typical
Pre-Irradiation
Units
W/°C
V/ns
www.irf.com
12/7/01
IRHNB7260
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.26 0.070 0.077 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, =27A 12V, VGS, 1.0mA 15V, VDS= 160V ,VGS=0V 160V, 125°C -20V =12V, =43A 100V 100V, =43A =12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
5300 1200
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 43A, 25°C, 43A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
0.42
°C/W
Test Conditions
Soldered copper-clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
www.irf.com
Radiation Characteristics Pre-Irradiation
IRHNB7260
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-3) Diode Forward Voltage
100K Rads (Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=160V, 12V, =27A 12V, =27A
-100 0.070 0.070
1.25
-100 0.110 0.110
Part number IRHNB7260 Part numbers IRHNB3260, IRHNB4260 IRHNB8260
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 Energy (MeV) Range (µm) @VGS=0V S(V) @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
www.irf.com
IRHNB7260
Pre-Irradiation
1000
Drain-to-Source Current
5.0V
20µs PULSE WIDTH
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
Pre-Irradiation
IRHNB7260
10000
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
160V 100V
Capacitance (pF)
6000
4000
2000
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
10us
100us
Single Pulse
10ms
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRHNB7260
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
Pre-Irradiation
IRHNB7260
1200
Single Pulse Avalanche Energy (mJ)
1000
BOTTOM
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRHNB7260
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 50V, starting 25°C, L=0.54mH Peak 43A, =12V 43A, di/dt 410A/µs, 200V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-3
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 12/01
www.irf.com
Other recent searches
TCS10DLU - TCS10DLU TCS10DLU Datasheet
T0505xH - T0505xH T0505xH Datasheet
T0509xH - T0509xH T0509xH Datasheet
SSM630GP - SSM630GP SSM630GP Datasheet
SSA-195 - SSA-195 SSA-195 Datasheet
PCHMB400A6 - PCHMB400A6 PCHMB400A6 Datasheet
MMPQ2369 - MMPQ2369 MMPQ2369 Datasheet
Max220 - Max220 Max220 Datasheet
HSOP20 - HSOP20 HSOP20 Datasheet
GFX-70 - GFX-70 GFX-70 Datasheet
GA400TD60U - GA400TD60U GA400TD60U Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
