RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1) Part Number

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1) Part Number

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1)
Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) HEXFET®
IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
Part Number JANSR2N7269U JANSF2N7269U JANSG2N7269U JANSH2N7269U
SMD-1
International Rectifier's RADHard technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rds(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight footnotes refer last page sec) (Typical
Pre-Irradiation
Units
W/°C
V/ns
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12/17/01
IRHN7250
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.27 0.10 0.11 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, =16A 12V, VGS, 1.0mA 15V, VDS= 160V ,VGS=0V 160V, 125°C -20V =12V, =26A 100V 100V, =26A =12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source 1.0MHz
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4700
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 26A, 25°C, 26A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
0.83
°C/W
Test Conditions
Soldered inch square clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHN7250
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-1) Diode Forward Voltage
Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=160V, 12V, =16A 12V, =16A
-100 0.100 0.100
1.25
-100 0.155 0.155
Part number IRHN7250 (JANSR2N7269U) Part numbers IRHN3250, IRHN4250 IRHN8250 (JANSF2N7269U, JANSG2N7269U JANSH2N7269U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 Energy (MeV) Range (µm) @VGS=0V S(V) @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHN7250
Post-Irradiation Pre-Irradiation
Typical Response Gate Threshhold Typical Response On-State Resistance Total Dose Exposure Voltage Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHN7250
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
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IRHN7250
Note: Bias Conditions during radiation: Vdc,
RadiationPost-Irradiation Characteristics Pre-Irradiation
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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Radiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: Vdc,
IRHN7250
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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IRHN7250
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHN7250
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHN7250
Pre-Irradiation
D.U.T.
-VDD
Pulse Width Duty Factor
26a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
26b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN7250
28a. Unclamped Inductive Test Circuit
28c. Maximum Avalanche Energy Drain Current
28b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
29a. Basic Gate Charge Waveform
29b. Gate Charge Test Circuit
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IRHN7250
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=1.48mH Peak 26A, =12V 26A, di/dt 190A/µs, 200V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-1
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 12/01
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1) Part Number

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