RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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90674C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.10 0.10 0.10
IRHM7250 JANSR2N7269 200V, N-CHANNEL
REF: MIL-PRF-19500/603 Hard HEXFET TECHNOLOGY
Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269
1000K Rads (Si) 0.10 HEXFET®
TO-254AA
International Rectifier's RADHard technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
(0.063 (1.6mm) from case 10s) (Typical)
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10/11/00
IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.27 0.10 0.11 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= 160V,VGS=0V 160V 125°C -20V 12V, 100V 100V, 26A, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/0.25in. from package) source lead (6mm/0.25in. from package)
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4700
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 26A, 25°C, 26A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Units
0.83 0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM7250, JANSR2N7269
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=160V, 12V, =16A 12V, =16A
-100 0.094 0.10
1.25
-100 0.149 0.155
Part number IRHM7250 (JANSR2N7269) Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
MeV/(mg/cm2)) 36.8 Energy (MeV) Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM7250, JANSR2N7269
Post-Irradiation Pre-Irradiation
Typical Response Gate Threshhold Voltage Total Dose Exposure
Typical Response On-State Resistance Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHM7250, JANSR2N7269
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
High Dose Rate (Gamma Dot) Test Circuit
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IRHM7250, JANSR2N7269
Note: Bias Conditions during radiation: Vdc,
RadiationPost-Irradiation Characteristics Pre-Irradiation
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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Radiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: Vdc,
IRHM7250, JANSR2N7269
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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IRHM7250, JANSR2N7269
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7250, JANSR2N7269
Typical CapacitanceVs. Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM7250, JANSR2N7269
Pre-Irradiation
D.U.T.
-VDD
Pulse Width Duty Factor
26a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
26b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7250, JANSR2N7269
28a. Unclamped Inductive Test Circuit
28c. Maximum Avalanche Energy Drain Current
28b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
29a. Basic Gate Charge Waveform
29b. Gate Charge Test Circuit
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IRHM7250, JANSR2N7269
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 1.5mH Peak 26A, 26A, di/dt 190A/µs, 200V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-254AA
.005 3.78 .149 3.53 .139 13.84 .545 13.59 .535 6.60 .260 6.32 .249 1.27 .050 1.02 .040
17.40 .685 16.89 .665 31.40 1.235 30.39 1.199
20.32 .800 20.07 .790
13.84 .545 13.59 .535
3.81 .150
1.14 .045 0.89 .035 .020 .010
3.81 .150
IRHM7250D IRHM7250U
LEGEND DRAIN SOURCE GATE
CAUTION BERYLLIA WARNING MIL-PRF-19500 Packages containing beryllia shall ground, sandblasted, machined have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice. 10/00
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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