HEXFET Power MOSFET IRF530NS IRF530NL VDSS 100V RDS(on)

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HEXFET Power MOSFET IRF530NS IRF530NL VDSS 100V RDS(on)

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91352B
HEXFET Power MOSFET
IRF530NS IRF530NL
VDSS 100V RDS(on)
Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely onresistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications.
D2Pak surface mount power package capable accommodating sizes HEX-4. provides highest power capability lowest possible on-resistance existing surface mount package. D2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application. through-hole version (IRF530NL) available low-profile applications.
D2Pak IRF530NS
TO-262 IRF530NL
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.47 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
Max.
2.15
Units
°C/W
www.irf.com
09/04/02
IRF530NS/IRF530NL
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min.
Typ. 0.11
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 9.0A VGS, 250µA 50V, 9.0A 100V, 80V, 150°C -100 -20V 9.0A 10V, Fig. 9.0A 10V, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 9.0A, 2.3mH
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 9.0A, 25°C, 9.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. (See fig. Starting 25°C, 2.3mH 9.0A, VGS=10V (See Figure 9.0A, di/dt 410A/µs, V(BR)DSS, 175°C Pulse width 400µs; duty cycle
This typical value device destruction represents
operation outside rated limits.
This calculated value limited 175°C Uses IRF530N data test conditions.
**When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994
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IRF530NS/IRF530NL
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF530NS/IRF530NL
1600
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
9.0A
Capacitance (pF)
1200
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000 OPERATION THIS AREA LIMITED DS(on)
Reverse Drain Current
Drain-to-Source Current
100µsec
1msec 25°C 175°C Single Pulse 10msec
1000
,Source-to-Drain Voltage
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF530NS/IRF530NL
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF530NS/IRF530NL
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
3.7A 6.4A 9.0A
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRF530NS/IRF530NL
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD
5.0V Logic Level Drive Devices N-channel HEXFET® power MOSFETs
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IRF530NS/IRF530NL
D2Pak Package Outline
D2Pak Part Marking Information
THIS IRF530S WITH CODE 8024 EMBLED 2000 SEMBLY LINE INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
www.irf.com
IRF530NS/IRF530NL
TO-262 Package Outline
IGBT GATE COLLECTOR EMITTER COLLECTOR
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE ERNATIONAL RECTIFIER LOGO SEMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
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IRF530NS/IRF530NL
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
D2Pak Tape Reel Information
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961)
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.09/02
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HEXFET Power MOSFET IRF530NS IRF530NL VDSS 100V RDS(on)

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