IRF530N HEXFET® Power MOSFET Advanced Process Technology Ult

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IRF530N HEXFET® Power MOSFET Advanced Process Technology Ult

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91351
IRF530N
HEXFET® Power MOSFET
Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS 100V RDS(on)
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
0.47 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
2.15
Units
°C/W
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3/16/01
IRF530N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min.
Typ. 0.11
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 9.0A VGS, 250µA 50V, 9.0A 100V, 80V, 150°C -100 -20V 9.0A 10V, Fig. 9.0A 10V, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 9.0A, 2.3mH
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 9.0A, 25°C, 9.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. (See fig.
Pulse width 400µs; duty cycle This typical value device destruction represents
operation outside rated limits.
Starting 25°C, 2.3mH
9.0A, VGS=10V (See Figure
This calculated value limited 175°C
9.0A, di/dt 410A/µs, V(BR)DSS,
175°C
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IRF530N
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF530N
1600
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
9.0A
1200
Capacitance (pF)
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000 OPERATION THIS AREA LIMITED (on)
Reverse Drain Current
Drain-to-Source Current
100µsec
1msec 25°C 175°C Single Pulse 10msec
,Source-to-Drain Voltage
1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF530N
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF530N
Single Pulse Avalanche Energy (mJ)
BOTTOM
3.7A 6.4A 9.0A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRF530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
5.0V Logic Level Drive Devices N-channel HEXFET® power MOSFETs
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IRF530N
Package Outline
TO-220AB Dimensions shown millimeters (inches)
2.87 (.11 2.62 (.10 (.149 (.139 6.47 (.25 6.10 (.24 4.69 4.20 (.05 (.04
5.24 (.60 4.84 (.58
1.15 (.04
GATE
4.09 (.55 3.47 (.53
4.06 (.16 3.55 (.14
0.93 (.03 0.69 (.02
0.55 (.02 0.46 (.01
(.01
2.54 (.10 4.5M
(.11 (.10
Part Marking Information
TO-220AB
9B1M
LOGO ASSEMBLY
PART MBER 9246
YEAR
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.3/01
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IRF530N HEXFET® Power MOSFET Advanced Process Technology Ult

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