RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

Datasheet Thumbnail

Top Searches for this datasheet

91274D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si) IRHY4130CM 600K Rads (Si) IRHY8130CM 1000K Rads (Si) RDS(on) 0.18 0.18 0.18 0.18 HEXFET® 14.4A 14.4A 14.4A 14.4A
IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
Part Number
JANSR2N7380 JANSF2N7380 JANSG2N7380 JANSH2N7380
TO-257AA
International Rectifier's RADHard technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rds(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page 14.4
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) (Typical
www.irf.com
12/17/01
IRHY7130CM
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.11 0.18 0.20 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, =9.1A 12V, 14.4A VGS, 1.0mA 15V, 9.1A VDS= ,VGS=0V 80V, 125°C -20V =12V, =14.4A 50V, =14.4A =12V,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/0.25in. from package) source lead (6mm/0.25in. from package)
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
14.4
Test Conditions
25°C, 14.4A, 25°C, 14.4A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJA Junction-to-Case Junction-to-Ambient
Units
1.67
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
www.irf.com
Pre-Irradiation Radiation Characteristics
IRHY7130CM
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
100K Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=80V, 12V, =9.1A 12V, =9.1A 14.4A
-100 0.18 0.18
1.25
-100 0.24 0.24
Part number IRHY7130, (JANSR2N7380) Part numbers IRHY3130 IRHY4130 IRHY8130 (JANSF2N7380, JANSG2N7380 JANSH2N7380)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 Energy (MeV) Range (µm) @VGS=0V S(V) @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
www.irf.com
IRHY7130CM
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
DS(on) Drain-to-Source Resistance (Normalized)
14.4A
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
Pre-Irradiation
IRHY7130CM
2000
Gate-to-Source Voltage
Capacitance (pF)
1500
1MHz Ciss SHORTED Crss Coss
1000
Ciss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
100us
Single Pulse
10ms
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRHY7130CM
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
Fig10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: Duty factor Peak thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
Pre-Irradiation
IRHY7130CM
Single Pulse Avalanche Energy (mJ)
BOTTOM 6.4A 9.1A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
Fig13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRHY7130CM
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=1.45mH Peak 14.4A, =12V 14.4A, di/dt 395A/µs, 100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-257AA
10.66 [.420] 10.42 [.410] 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527]
16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410]
15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100]
0.88 [.035] 0.64 [.025]
3.05 [.120]
0.50 [.020]
DIMENS IONING OLERANCING Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS HOWN MILLIMET [INCHES LINE CONFORMS JEDEC LINE O-257AA.
IGNMENTS
DRAIN OURCE GATE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 12/01
www.irf.com

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Part Number

Top Searches for this datasheet

Other recent searches