IRF1310N HEXFET® Power MOSFET Advanced Process Technology Dy

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IRF1310N HEXFET® Power MOSFET Advanced Process Technology Dy

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91504A
IRF1310N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS 100V
RDS(on) 0.036
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.95
Units
°C/W
5/14/98
IRF1310N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.11 1900
Max. Units Conditions 250µA V/°C Reference 25°C, 0.036 10V, 250µA 25V, 100V, 80V, 150°C -100 -20V 10V, Fig. 2.9, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 22A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
22A, di/dt 180A/µs, V(BR)DSS,
175°C
Starting 25°C, 1.7mH
22A. (See Figure
Pulse width 300µs; duty cycle
IRF1310N
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20us PULSE WIDTH
20us PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
10.0
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRF1310N
3500
3000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
2500
Ciss
2000 1500
1000
Coss Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
OPERATION THIS AREA LIMITED RDS(on)
Reverse Drain Current
Drain Current
10us
100us
Single Pulse
10ms
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRF1310N
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.001 0.01
0.01 0.00001
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF1310N
1000
Single Pulse Avalanche Energy (mJ)
BOTTOM
9.0A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature (oC)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRF1310N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRF1310N
Package Outline
TO-220AB Outline Dimensions shown millimeters (inches)
2.87 (.11 2.62 (.10 (.149 (.139 6.47 (.25 6.10 (.24 4.69 4.20 (.05 (.04
5.24 (.60 4.84 (.58
1.15 (.04
GATE
4.09 (.55 3.47 (.53
4.06 (.16 3.55 (.14
0.93 (.03 0.69 (.02
0.55 (.02 0.46 (.01
(.01
2.54 (.10 4.5M
(.11 (.10
Part Marking Information
TO-220AB
EXAMP ASSEMB
TIOL TIFIE LOGO ASSEMB ASSEMBLY
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 5/98

IRF1310N HEXFET® Power MOSFET Advanced Process Technology Dy

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