RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Part Number
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91396C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) IRHNA4160 600K Rads (Si) IRHNA8160 1000K Rads (Si) RDS(on) 0.04 0.04 0.04 0.04
IRHNA7160 100V, N-CHANNEL
REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY
Part Number JANSR2N7432U JANSF2N7432U JANSG2N7432U JANSH2N7432U
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight footnotes refer last page 32.5 (Typical)
Pre-Irradiation
Units
W/°C
V/ns
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5/4/2000
IRHNA7160
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.11 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 32.5A 12V, VGS, 1.0mA 15V, 32.5A VDS= 80V,VGS=0V 125°C -20V 12V, 50V, 51A, 2.35
0.040 0.045 -100
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
5300 1600
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 51A, 25°C, 51A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC Board
Units
0.42
°C/W
Test Conditions
Solder copper clad Board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHNA7160
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=80V, 12V, =32.5A 12V, =32.5A
-100 0.045 0.04
1.25
-100 0.062 0.057
Part number IRHNA7160 (JANSR2N7432U) Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) IRHNA8160 (JANSH2N7432U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
MeV/(mg/cm2)) 36.8 Energy (MeV)
VDS(V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHNA7160
Pre-Irradiation
1000
1000
5.0V
20µs PULSE WIDTH
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHNA7160
10000
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
6000
Ciss
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHNA7160
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA7160
1200
Single Pulse Avalanche Energy (mJ)
BOTTOM
1000
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHNA7160
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 0.38mH Peak 51A, 51A, di/dt 410A/µs, 100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-2
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