Dual IGBTMODF-Series Module Amperes/1200 Volts MEASURED POIN
|
|
|
Top Searches for this datasheet
CM600DU-24F
Dual IGBTMODF-Series Module
Amperes/1200 Volts
MEASURED POINT TYP.)
PLACES) PLACES)
LABEL
C2E1
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors halfbridge configuration with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking
Millimeters 14.5 40.0 65.0 Dia.
Outline Drawing Circuit Diagram Dimensions Inches 5.51 5.12 5.12 1.38 +0/-0.02 4.33±0.01 4.33±0.01 0.39 0.45 0.54 1.72 1.42 0.39 0.80 Millimeters 140.0 130.0 130.0 35.0 +0/-0.5 110.0±0.25 110.0±0.25 10.0 11.5 13.8 43.8 36.0 10.0 20.4 Dimensions Inches 0.57 1.57 2.56 0.26 Dia. 0.32
Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM600DU-24F 1200V (VCES), Ampere Dual IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
0.97 +0.04/-0.02 24.5 +1.0/-0.5 0.59 0.35 1.02 0.79 15.0 26.0 20.0
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODF-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C, 150°C) Mounting Torque, Main Terminal Mounting Torque, Mounting G(E) Terminal, Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM600DU-24F 1200 1200* 1200* 1540 1200 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 60mA, 600A, 15V, 25°C 600A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage** 600V, 600A, 600A, Min. Typ. 1.95 2.05 6600 Max. 2.55 3.35 Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODF-Series Module Amperes/1200 Volts
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 600A, VGE1 VGE2 15V, Inductive Load Switching Operation 600A 10V, Test Conditions Min. Typ. 43.2 Max. Units
Diode Reverse Recovery Time* Diode Reverse Recovery Charge*
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Symbol Rth(j-c)Q Rth(j-c)R Rth(j-c')Q Rth(c-f) Test Conditions IGBT Module, Reference Point Outline Drawing Thermal Resistance, Junction Case FWDi Module, Reference Point Outline Drawing Thermal Resistance IGBT Module Reference Point Under Chips Contact Thermal Resistance External Gate Resistance Module, Thermal Grease Applied 0.010 °C/W 0.032** °C/W 0.11 °C/W Min. Typ. Max. 0.081 Units °C/W
*Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi). **If this value, Rth(f-a) should measured just under chips.
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODF-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
25°C 125°C
25°C
1200A
600A 240A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1200
COLLECTOR-CURRENT, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
td(off) td(on)
Cies
SWITCHING TIME, (ns)
600V ±15V 25°C Inductive Load
Coes Cres
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 600V ±15V 25°C Inductive Load
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT FWDi)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-3
10-2
10-1
600A
400V 600V
Unit Base Rth(j-c) 0.081°C/W (IGBT) Rth(j-c) 0.11 °C/W (FWDi) Single Pulse 25°C
10-1
10-1
10-2
10-2
EMITTER CURRENT, (AMPERES)
2000 4000 6000 8000 10000
GATE CHARGE, (nC)
10-3 10-5
TIME,
10-4
10-3 10-3
Other recent searches
UM0784 - UM0784 UM0784 Datasheet
SN74AVCH8T245 - SN74AVCH8T245 SN74AVCH8T245 Datasheet
Si9160 - Si9160 Si9160 Datasheet
LSI40919 - LSI40919 LSI40919 Datasheet
LSI40919O - LSI40919O LSI40919O Datasheet
EB52C5 - EB52C5 EB52C5 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
