RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) Part Number IR

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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) Part Number IR

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90677D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
Part Number IRH7150 IRH3150 IRH4150 IRH8150 Radiation Level RDS(on) 100K Rads (Si) 0.065 300K Rads (Si) 0.065 600K Rads (Si) 0.065 1000K Rads (Si) 0.065
IRH7150 100V, N-CHANNEL
Hard HEXFET TECHNOLOGY
TO-204AE
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) 11.5 (Typical
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IRH7150
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.13 0.065 0.076 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= ,VGS=0V 80V, 125°C -20V =12V, 50V, =12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4300 1200
-25V 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 34A, 25°C, 34A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.83 0.12
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRH7150
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-204AA) Diode Forward Voltage
100K Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=80V, 12V, =21A 12V, =21A
-100 0.065 0.065
1.25
-100 0.09 0.09
Part number IRH7150 Part numbers IRH3150, IRH4150 IRH8150
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
MeV/(mg/cm2)) 36.8 Energy (MeV) Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRH7150
Post-Irradiation Pre-Irradiation
Typical Response Gate Threshhold Typical Response On-State Resistance Total Dose Exposure Voltage Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRH7150
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
High Dose Rate (Gamma Dot) Test Circuit
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IRH7150
Note: Bias Conditions during radiation: Vdc,
RadiationPost-Irradiation Characteristics Pre-Irradiation
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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Radiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: Vdc,
IRH7150
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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IRH7150
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRH7150
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRH7150
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
27a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
27b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRH7150
29a. Unclamped Inductive Test Circuit
29c. Maximum Avalanche Energy Drain Current
29b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
30a. Basic Gate Charge Waveform
30b. Gate Charge Test Circuit
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IRH7150
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=0.86mH Peak 34A, =12V 34A, di/dt 140A/µs, 100V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-204AE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 03/01
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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) Part Number IR

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