RADIATION HARDENED POWER MOSFET URFACE MOUNT (SMD-1) Part Number
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RADIATION HARDENED POWER MOSFET URFACE MOUNT (SMD-1)
Part Number Radiation Level IRHN7054 100K Rads (Si) IRHN3054 300K Rads (Si) IRHN4054 600K Rads (Si) IRHN8054 1000K Rads (Si) DS(on) 0.027 0.027 0.027 0.027
IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603
Hard HEXFET TECHNOLOGY
Part Number
JANSR2N7394U JANSF2N7394U JANSG2N7394U JANSH2N7394U
SMD-1
International Rectifiers RADHard provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
HEXFET® technol-
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight footnotes refer last page (5sec) (Typical
Pre-Irradiation
Units
W/°C
V/ns
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8/9/01
IRHN7054
Pre-Irradiation
25°C (Unless Otherwise Specified)
Electrical Characteristics
Parameter
Units
0.053 0.027 0.030 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= ,VGS=0V 48V, 125°C -20V =12V, =30V, =12V, 2.35
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4100 2000
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
Test Conditions
0.83 °C/W Soldered inch square clad board
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHN7054
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1000K Rads (Si)
Units Units
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on)
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (SMD-1) Diode Forward Voltage"
-100 0.027 0.027
1.25
-100 0.04 0.04
1.0mA VDS, 1.0mA VDS=48V, 12V, =30A 12V, =30A
Part numbers IRHN7054 (JANSR2N7394U) Part number IRHN3054, IRHN4054 IRHN8054 (JANSH2N7394U, JANSF2N7394U, JANSG2N7394U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
Energy Range DS(V) MeV/(mg/cm (MeV) (µm) @VGS=-20V 59.9 32.8 36.8
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHN7054
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHN7054
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
6000
Ciss
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHN7054
Pre-Irradiation
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN7054
Single Pulse Avalanche Energy (mJ)
1200
BOTTOM
1000
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHN7054
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=0.82mH Peak 35A, =12V 35A, di/dt 150A/µs, 60V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-1
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 07/01
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