RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Part Number

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91564D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Part Number Radiation Level IRHM7064 100K Rads (Si) IRHM3064 300K Rads (Si) IRHM4064 600K Rads (Si) IRHM8064 1000K Rads (Si)
IRHM7064 JANSR2N7431 60V, N-CHANNEL REF:MIL-PRF-19500/663
Hard HEXFET TECHNOLOGY
Part Number DS(on) 0.021 35*A JANSR2N7431 0.021 35*A JANSF2N7431 0.021 35*A JANSG2N7431 0.021 35*A JANSH2N7431
TO-254AA
International Rectifiers RADHard provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
HEXFET® technol-
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page *Current limited diameter
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) (Typical
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8/9/01
IRHM7064
Pre-Irradiation
25°C (Unless Otherwise Specified)
Electrical Characteristics
Parameter
Units
0.056 0.021 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, VGS, 1.0mA 15V, VDS= ,VGS=0V 48V, 125°C -20V =12V, =30V, =12V, 2.35
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in from package) Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4900 2800
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
*Current limited diameter
Thermal Resistance
Parameter
thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.50 0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM7064
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1000K Rads (Si)
Units Units
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on)
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-254AA) Diode Forward Voltage"
-100 0.021 0.021
1.25
-100 0.031 0.031
1.0mA VDS, 1.0mA VDS=48V, 12V, =35A 12V, =35A
Part numbers IRHM7064 Part number IRHM3064, IRHM4064 IRHM8064
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
MeV/(mg/cm 59.9 36.8 Energy Range VDS(V) (MeV) (µm) @VGS=-20V 32.8
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM7064
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
20µs PULSE WIDTH 5.0V
Drain-to-Source Voltage
5.0V 20µs PULSE WIDTH
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7064
10000
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
6000
Ciss Coss
4000
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
Single Pulse
10ms 1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM7064
Pre-Irradiation
LIMITED PACKAGE
Drain Current
D.U.T.
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7064
1400
Single Pulse Avalanche Energy (mJ)
1200 1000
BOTTOM
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHM7064
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=0.82mH Peak 35A, =12V 35A, di/dt 220A/µs, 60V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-254AA
.005 3.78 .149 3.53 .139 -A13.84 .545 13.59 .535 6.60 .260 6.32 .249 -B1.27 .050 1.02 .040
17.40 .685 16.89 .665 31.40 1.235 30.39 1.199
20.32 .800 20.07 .790
13.84 .545 13.59 .535
LEGEND COLL EMIT GATE
3.81 .150
1.14 .045 0.89 .035 .020 .010
3.81 .150
IRHM57163SED IRHM57163SEU
LEGEND DRAIN SOURCE GATE
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 08/01
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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Part Number

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