IRFIZ44N HEXFET® Power MOSFET Advanced Process Technology Is
|
|
|
Top Searches for this datasheet
9.1403A
IRFIZ44N
HEXFET® Power MOSFET
Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Sink Lead Creepage Dist. 4.8mm Fully Avalanche Rated
VDSS RDS(on) 0.024
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 Fullpak eliminates need additional insulating hardware commercial-industrial applications. moulding compound used provides high isolation capability thermal resistance between external heatsink. This isolation equivalent using micron mica barrier with standard TO-220 product. Fullpak mounted heatsink using single clip single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient
Typ.
Max.
Units
°C/W 8/25/97
IRFIZ44N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS d(on) d(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain Sink Capacitance
Min.
Typ. 0.055 1300
Max. Units Conditions 250µA V/°C Reference 25°C, 0.024 10V, VGS, 250µA 25V, 55V, 44V, 150°C -100 -20V 10V, Fig. 1.1, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 1.0MHz
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 17A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle t=60s, =60Hz
Uses IRFZ44N data test conditions
25V, starting 25°C, 470µH
25A. (See Figure
25A, di/dt 320A/µs, V(BR)DSS,
175°C
IRFIZ44N
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTT 4.5V
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTT 4.5V
rain-to-S ource oltage
Drain-to-Source oltage
Typical Output Characteristics
Typical Output Characteristics
1000
ain- to-S ourc
ate-t
Junction emperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRFIZ44N
2500
2000
1500
1000
Drain-to-Source oltage
Total Gate Charge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
ATION IMITED (on)
rain urre
100µ
25°C
Sing ulse
Source-to-D rain Voltage
rain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRFIZ44N
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Thermal Response
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ44N
D.U.T.
OTTO
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRFIZ44N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRFIZ44N
Package Outline
TO-220 Fullpak Outline Dimensions shown millimeters (inches)
10.60 (.417 10.40 (.409 -A3.7 (.145) (.126) 4.80 (.189 4.60 (.181 2.80 (.110) 2.60 (.102) SIGN
7.10 (.280 6.70 (.263
(.630) (.622)
1.15 (.045)
SION 4.5M 1982 SION
3.30 (.130) 3.10 (.122) (.540) (.530)
1.40 (.05 1.05 (.04 (.100) 0.90 (.035 0.70 (.028 0.25 (.010) 0.48 (.019 0.44 (.017
2.85 2.65
4.80 (.189
Part Marking Information
TO-220 Fullpak
1010 AMXAM AIRF I840G MBLY TLOT CODE E401
IONA 1010 CTIF I840G 9246
LOGO
MBLY
CODE Y(YYW YE)A
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 8/97
Other recent searches
STW20NM60 - STW20NM60 STW20NM60 Datasheet
RAM12288 - RAM12288 RAM12288 Datasheet
ISL6539 - ISL6539 ISL6539 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
