IRLL014N HEXFET® Power MOSFET Surface Mount Advanced Process

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRLL014N HEXFET® Power MOSFET Surface Mount Advanced Process

Datasheet Thumbnail

Top Searches for this datasheet

91499B
IRLL014N
HEXFET® Power MOSFET
Surface Mount Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated
VDSS RDS(on) 0.14
2.0A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SOT-223 package designed surface-mount using vapor phase, infra red, wave soldering techniques. unique package design allows easy automatic pickand-place with other SOIC packages added advantage improved thermal performance enlarged heatsinking. Power dissipation 1.0W possible typical surface mount application.
Absolute Maximum Ratings
Parameter
25°C 25°C 70°C 25°C 25°C dv/dt TSTG Continuous Drain Current, 10V** Continuous Drain Current, 10V* Continuous Drain Current, 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
Units
mW/°C
V/ns
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
°C/W
When mounted FR-4 board using minimum recommended footprint. When mounted inch square copper board, comparison with other devices.
www.irf.com
1/25/99
IRLL014N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.015
Max. Units Conditions 250µA V/°C Reference 25°C, 0.14 10V, 2.0A 0.20 5.0V, 1.2A 0.28 4.0V, 1.0A VGS, 250µA 25V, 1.0A 55V, 44V, 150°C -100 -16V 2.0A 10V, Fig. 2.0A Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.0A, 25°C, 2.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
2.0A, di/dt 170A/µs, V(BR)DSS,
150°C
25V, starting 25°C, 4.0mH
4.0A. (See Figure
Pulse width 300µs; duty cycle
www.irf.com
IRLL014N
7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
rain-to-Source urrent
rain-to-Source urrent
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
rain-to-S ourc oltage
rain-to-S ource oltage
Typical Output Characteristics,
Typical Output Characteristics,
(on) in-to alize
rain-to-So urce urren
ate-to urce Voltag
tion perature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRLL014N
Capacitance (pF)
ate-to-S ource oltage
rain-to-S ourc oltage
otal harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
everse Drain urrent
rain Current
00µs
ourc e-to-D rain oltage
rain-to-S ource oltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRLL014N
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
1000
10b. Switching Time Waveforms
Therm esponse
0.00001 0.0001 0.001 0.01
1000
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
IRLL014N
ingle Pulse Avalanc nergy
OTTOM
4.0A
12a. Unclamped Inductive Test Circuit
tarting tion perature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
www.irf.com
IRLL014N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
www.irf.com
IRLL014N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
XXXXXX
www.irf.com
IRLL014N
Tape Reel Information
SOT-223 Outline
NOTES
330.00 (13.000)
0.00
(.72
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 1/99
www.irf.com

IRLL014N HEXFET® Power MOSFET Surface Mount Advanced Process

Top Searches for this datasheet

Other recent searches