IRL3705NS/L Logic-Level Gate Drive Advanced Process Technology Su
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91502C
IRL3705NS/L
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description
HEXFET® Power MOSFET
VDSS RDS(on) 0.01
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. D2Pak surface mount power package capable accommodating sizes HEX-4. provides highest power capability lowest possible onresistance existing surface mount package. D2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application. through-hole version (IRL3705NL) available lowprofile applications.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient Mounted,steady-state)**
Typ.
Max.
0.90
Units
°C/W 5/12/98
IRL3705NS/L
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.056 Max. Units Conditions 250µA V/°C Reference 25°C, 0.010 10V, 0.012 5.0V, 0.018 4.0V, 250µA 25V, 55V, 44V, 150°C -100 -16V 5.0V, Fig. 1.8, 5.0V 0.59, Fig. Between lead, center contact 3600 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 46A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Uses IRL3705N data test conditions Calculated continuous current based maximum allowable
25V, starting 25°C, 320µH
46A. (See Figure
46A, di/dt 250A/µs, V(BR)DSS,
175°C
junction temperature; recommended current-handling package refer Design 93-4 When mounted square FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994.
IRL3705NS/L
1000
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
1000
rain-to-S ource urrent
Drain-to-Source Current
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5V
rain-to-S ource oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
1000
rain-to-S ource esistance alized)
-to-S ourc urrent
Junction perature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRL3705NS/L
6000
5000
4000
ate-to-S ource oltage
1MHz
Capacitance (pF)
3000
2000
1000
rain-to-S ourc oltage
otal harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse rain urrent
100µ
rain Current
ourc e-to-D rain oltage
rain-to-S ource oltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRL3705NS/L
LIMITED PACKAGE
D.U.T.
Drain Current
5.0V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3705NS/L
ingle Pulse Avalanc nergy
12a. Unclamped Inductive Test Circuit
tarting tion perature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRL3705NS/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRL3705NS/L
D2Pak Package Outline
0.54 0.29 (.055
4.69 4.20
(.05 (.04
0.16
6.47 6.18 (.20 (.18 (.110 (.090 2.61 2.32
(.07 (.05
1.40 1.14 (.20
(.03 (.02 (.01
(.022 (.018
1.43
FTER 4.5M ATSINK
8.89 (.70
(.15 (.08 (.100
Part Marking Information
D2Pak
PART F530S
DATE CODE
IRL3705NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRL3705NS/L
Tape Reel Information
D2Pak
(.06 (.05
CTIO
(.42 (.42 (.06 (.04 (.63 (.62
13.50 (.532 12.80 (.504
(1.079)
0.00
60.00 (2.3
LLIN
(1.03 (.961
0.40 (1.1 MAX.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 5/98
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