IRLBA1304/P HEXFET® Power MOSFET Logic-Level Gate Drive Ultr

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IRLBA1304/P HEXFET® Power MOSFET Logic-Level Gate Drive Ultr

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91842
IRLBA1304/P
HEXFET® Power MOSFET
Logic-Level Gate Drive Ultra On-Resistance Same outline TO-220 greater current typ. application conditions TO-220 Fully Avalanche Rated
VDSS RDS(on) 0.004
185A
Description
HEXFET® most popular power MOSFET world. This particular HEXFET® Super220and same outline pinout industry standard TO-220. increased current handling capability over both TO-220 much larger TO-247 package. This makes ideal reduce component count multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs have TO-247 performance TO-220 outline. This package also been designed meet
automotive qualification standard Q101.
Super_
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Recommended clip force
Max.
185, limited 95A* 130, limited 95A* 1160 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
Units
°C/W
Current capability normal application, Fig.9.
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6/1/99
IRLBA1304/P
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. Typ. Max. Units Conditions 250µA 0.043 V/°C Reference 25°C, 0.0040 10V, 110A 0.0065 4.5V, VGS, 250µA 25V, 110A 40V, 32V, 150°C -100 -16V 110A 4.5V, Fig. 110A 0.18,See Fig. Between lead, (0.25in.) from package center contact 7660 2150 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 185* showing integral reverse junction diode. 25°C, 110A, 25°C, 110A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
110A, di/dt 170A/µs, V(BR)DSS,
175°C
Starting 25°C, 230µH
100A. (See Figure
Pulse width 300µs; duty cycle
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IRLBA1304/P
1000
5.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V
1000
Drain-to-Source Current
Drain-to-Source Current
5.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
2.5V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
170A
Drain-to-Source Current
20µs PULSE WIDTH 10.0
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLBA1304/P
12000
Gate-to-Source Voltage
10000
1MHz Ciss SHORTED Crss Coss
110A
Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
10000
OPERATION THIS AREA LIMITED RDS(on)
Reverse Drain Current
Drain Current
1000 10us
100us
Single Pulse
10ms
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLBA1304/P
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
4.5V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLBA1304/P
3000
Single Pulse Avalanche Energy (mJ)
2500
BOTTOM 100A
2000
1500
1000
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRLBA1304/P
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
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IRLBA1304/P
Super_220 Package Outline
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 6/99
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IRLBA1304/P HEXFET® Power MOSFET Logic-Level Gate Drive Ultr

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