HEXFET® Power MOSFET IRLML2402 VDSS Generation Technolo

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HEXFET® Power MOSFET IRLML2402 VDSS Generation Technolo

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91257D
HEXFET® Power MOSFET
IRLML2402
VDSS
Generation Technology Ultra On-Resistance N-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching
RDS(on) 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. customized leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, 4.5V Continuous Drain Current, 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
0.95
Units
mW/°C
V/ns
Thermal Resistance
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
Units
°C/W
01/15/03
IRLML2402
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS d(on) d(off) Ciss Coss Crss
Min. 0.70
Typ. 0.024 0.41
Max. Units Conditions 250µA V/°C Reference 25°C, 0.25 4.5V, 0.93A 0.35 2.7V, 0.47A VGS, 250µA 10V, 0.47A 16V, 16V, 125°C -100 -12V 0.93A 0.62 4.5V, Fig. 0.93A Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 0.54
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 0.93A, 25°C, 0.93A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec.
0.93A, di/dt 90A/µs, V(BR)DSS,
150°C
IRLML2402
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
Drain-to-Source Current
Drain-to-Source Current
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
1.5V
1.5V 20µs PULSE WIDTH 25°C
0.01
0.01
20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
25°C
150°C
DS(on) Drain-to-Source Resistance (Normalized)
0.93A
Drain-to-Source Current
0.01
20µs PULSE WIDTH
4.5V
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRLML2402
Gate-to-Source Voltage
1MHz SHORTED
0.93A
Capacitance (pF)
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
150°C
Drain Current
25°C
100µs
0.01
25°C 150°C Single Pulse
10ms
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRLML2402
4.5V
4.5V
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
1000
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10 0.05
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLML2402
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRLML2402
Package Outline
Micro3 (SOT-23 TO-236AB) Dimensions shown millimeters (inches)
INCHES .032 .001 .015 .004 .105 .044 .004 .021 .006 .120 MILLIMETERS 0.82 0.02 0.38 0.10 2.67 1.11 0.10 0.54 0.15 3.05
LEAD ASSIGNMENTS GATE SOURCE DRAIN
0.20 .008
.0750 BASIC .0375 BASIC .047 .083 .005 .055 .098 .010
1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 1.40 2.50 0.25
0.008 (.003)
0.10 (.004)
MINIMUM RECOMMENDED FOOTPRINT 0.80 .031 0.90 .035 2.00 .079
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS INCLUDE MOLD FLASH.
0.95 .037
Part Marking Information
Micro3 (SOT-23 TO-236AB)
`@6S XPSF X@@F
`@6S XPSF X@@F
96U@ 8P9@
8P9@
XPSF X@@F
`@6S
`@6S XPSF X@@F
IRLML2402
Tape Reel Information
2.05 .080 1.95 .077 .161 .154
Micro3 (SOT-23 TO-236AB) Dimensions shown millimeters (inches)
.062 .060 1.32 .051 1.12 .045
1.85 .072 1.65 .065
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 01/03

HEXFET® Power MOSFET IRLML2402 VDSS Generation Technolo

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