AUTOMOTIVE MOSFET IRFBA1404P HEXFET® Power MOSFET Anti-

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AUTOMOTIVE MOSFET IRFBA1404P HEXFET® Power MOSFET Anti-

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93806B
AUTOMOTIVE MOSFET
IRFBA1404P
HEXFET® Power MOSFET
Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking Radiator Control Advanced Process Technology Ultra On-Resistance Increase Current Handling Capability 175°C Operating Temperature Fast Switching Dynamic dv/dt Rating Repetitive Avalanche Allowed Tjmax
VDSS RDS(on) 3.7m
Benefits
206A
Description
Specifically designed Automotive applications, this Stripe Planar design HEXFET® Power MOSFETs utilizes latest processing techniques achieve extremely on-resistance silicon area. Additional features this MOSFET 175oC junction operating temperature, fast switching speed improved ruggedness single repetitive avalanche. Super-220 package that been designed have same mechanical outline pinout industry standard TO-220 house considerably larger silicon die. result significantly increased current handling capability over both TO-220 much larger TO247 package. combination extremely on-resistance silicon Super-220 package makes ideal reduce component count multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs have TO-247 performance TO-220 outline. This package been designed meet automotive, Q101, qualification standard. These benefits make this design extremely efficient reliable device Automotive applications wide variety other applications.
Super-220
Absolute Maximum Ratings
25°C 100°C 25°C dv/dt TSTG
Parameter
Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Recommended clip force
Max.
Fig.12a, 12b, (1.6mm from case
Units
W/°C V/ns
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8/14/02
IRFBA1404P
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min.
Typ. 0.036 7360 1680 6630 1490 1540
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 10V, 250µA 25V, 40V, 32V, 150°C -200 -20V 0.21 Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 1.0V, 1.0MHz 32V, 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 95A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
0.50
Units
°C/W
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IRFBA1404P
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
Drain-to-Source Current
RDS(on) Drain-to-Source Resistance (Normalized)
159A
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFBA1404P
12000
Gate-to-Source Voltage
10000
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
10000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
1000 10us
100us
10ms
Single Pulse
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFBA1404P
LIMITED PACKAGE
Drain Current
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJC
0.01
0.001 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBA1404P
Single Pulse Avalanche Energy (mJ)
1000
DRIVER
BOTTOM
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
DSav Avalanche Voltage
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Avalanche Current
Current Sampling Resistors
13b. Gate Charge Test Circuit
12d. Typical Drain-to-Source Voltage Avalanche Current
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IRFBA1404P
1000
Duty Cycle Single Pulse
Avalanche Current
0.01
0.05 0.10
Allowed avalanche Current avalanche pulsewidth, assuming 25°C avalanche losses
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
(sec)
Typical Avalanche Current Vs.Pulsewidth
Avalanche Energy (mJ)
Single Pulse BOTTOM Duty Cycle
Notes Repetitive Avalanche Curves Figures (For further info, AN-1005 www.irf.com) Avalanche failures assumption: Purely thermal phenomenon failure occurs temperature excess Tjmax. This validated every part type. Safe operation Avalanche allowed long asTjmax exceeded. Equation below based circuit waveforms shown Figures 12a, 12b. (ave) Average power dissipation single avalanche pulse. Rated breakdown voltage (1.3 factor accounts voltage increase during avalanche). Allowable avalanche current. Allowable rise junction temperature, exceed Tjmax (assumed 25°C Figure 16). Average time avalanche. Duty cycle avalanche ZthJC(D, tav) Transient thermal resistance, figure (ave) ZthJC 2DT/ (AR)
Starting Junction Temperature (°C)
Maximum Avalanche Energy Temperature
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IRFBA1404P
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFET Power MOSFETs
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IRFBA1404P
Super-220 Package Outline
11.00 [.433] 10.00 [.394] 5.00 [.196] 4.00 [.158] 9.00 [.354] 8.00 [.315] 0.25 [.010]
1.50 [.059] 0.50 [.020]
15.00 [.590] 14.00 [.552]
13.50 [.531] 12.50 [.493]
4.00 [.157] 3.50 [.138]
14.50 [.570] 13.00 [.512]
2.55 [.100]
1.30 [.051] 0.90 [.036]
1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099]
0.25 [.010]
Notes:
LEAD IGNMENT MOSF DRAIN OURCE DRAIN IGBT COLLECT EMIT COLLECT
DIMENS IONING OLERANCING ASME Y14.5M-1994. CONT ROLLING DIMENS ION: MILLIMET DIMENS IONS HOWN MILLIMET [INCHES]. LINE CONF ORMS JEDEC LINE O-273AA.
Repetitive rating; pulse width limited
max. junction temperature.
Starting 25°C, 0.11mH
95A.
Pulse width 400µs; duty cycle Coss eff. fixed capacitance that gives same charging time
Coss while rising from VDSS Refer AN-1001 Calculated continuous current based maximum allowable junction temperature. Package limitation current 95A.
95A, di/dt 150A/µs, V(BR)DSS,
175°C
Super-220 recommended surface mount application Data specifications subject change without notice. This product been designed qualified Automotive [Q101] market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.8/02
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AUTOMOTIVE MOSFET IRFBA1404P HEXFET® Power MOSFET Anti-

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