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HEXFET® Power MOSFET IRLML2803 VDSS Generation Technolo
Top Searches for this datasheet91258D HEXFET® Power MOSFET IRLML2803 VDSS Generation Technology Ultra On-Resistance N-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching RDS(on) 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. customized leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards. Micro3 Absolute Maximum Ratings Parameter 25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range Max. 0.93 Units mW/°C V/ns Thermal Resistance Maximum Junction-to-Ambient Parameter Typ. Max. Units °C/W 4/28/03 IRLML2803 Electrical Characteristics 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) IDSS IGSS d(on) d(off) Ciss Coss Crss Min. 0.87 Typ. 0.029 0.48 Max. Units Conditions 250µA V/°C Reference 25°C, 0.25 10V, 0.91A 0.40 4.5V, 0.46A VGS, 250µA 10V, 0.46A 24V, 24V, 125°C -100 -20V 0.91A 0.72 10V, Fig. 0.91A Fig. 1.0MHz, Fig. Source-Drain Ratings Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 0.54 Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 0.91A, 25°C, 0.91A di/dt 100A/µs Notes: Repetitive rating; pulse width limited max. junction temperature. fig. Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec. 0.91A, di/dt 120A/µs, V(BR)DSS, 150°C IRLML2803 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V Drain-to-Source Current Drain-to-Source Current 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 3.0V 20µs PULSE WIDTH 25°C 20µs PULSE WIDTH 150°C Drain-to-Source Voltage Drain-to-Source Voltage Typical Output Characteristics Typical Output Characteristics Drain-to-Source Current 25°C 150°C DS(on) Drain-to-Source Resistance (Normalized) 0.91A 20µs PULSE WIDTH Gate-to-Source Voltage Junction Temperature (°C) Typical Transfer Characteristics Normalized On-Resistance Temperature IRLML2803 Capacitance (pF) Ciss Coss Gate-to-Source Voltage 1MHz SHORTED 0.91A Crss TEST CIRCUIT FIGURE Drain-to-Source Voltage Total Gate Charge (nC) Typical Capacitance Drain-to-Source Voltage Typical Gate Charge Gate-to-Source Voltage Reverse Drain Current OPERATION THIS AREA LIMITED DS(on) 150°C Drain Current 10µs 25°C 100µs 25°C 150°C Single Pulse 10ms Source-to-Drain Voltage Drain-to-Source Voltage Typical Source-Drain Diode Forward Voltage Maximum Safe Operating Area IRLML2803 D.U.T. Charge Pulse Width Duty Factor Basic Gate Charge Waveform Current Regulator Same Type D.U.T. 10a. Switching Time Test Circuit .2µF .3µF D.U.T. td(on) d(off) Current Sampling Resistors Gate Charge Test Circuit 1000 10b. Switching Time Waveforms Thermal Response thJA 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01 0.00001 Rectangular Pulse Duration (sec) Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRLML2803 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test Driver Gate Drive P.W. Period P.W. Period VGS=10V D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple Logic Level Devices N-Channel HEXFETS IRLML2803 Package Outline SOT-23 Outline Dimensions shown millimeters (inches) LEAD ASSIGNMENTS GATE SOURCE DRAIN 0.20 .008 INCHES .032 .001 .015 .004 .105 .044 .004 .021 .006 .120 MILLIMETERS 0.82 0.02 0.38 0.10 2.67 1.11 0.10 0.54 0.15 3.05 .0750 BASIC .0375 BASIC .047 .083 .005 .055 .098 .010 1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 1.40 2.50 0.25 0.008 (.003) MINIMUM RECOMMENDED FOOTPRINT 0.10 (.004) 0.80 .031 0.90 .035 2.00 .079 NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS INCLUDE MOLD FLASH. 0.95 .037 IRLML2803 SOT-23 Part Marking Information Notes part marking information applies devices produced before 02/26/2001 EXAMPLE: IRLML6302 (1-26) PRECEDED DIGIT CALENDAR YEAR YEAR PART NUMBER 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK DATE CODE PART NUMBER CODE REFERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 (27-52) PRECEDED LETT YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK CODE EXAMPLES: 9503 9532 Notes part marking information applies devices produced after 02/26/2001 (1-26) PRECE DIGIT CALENDAR YEAR YEAR WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK PART NUMBER CODE PART NUMBER CODE REFERENCE: IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 (27-52) PRECEDED LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 WORK WEEK IRLML2803 Tape Reel Information SOT-23 Dimensions shown millimeters (inches) 2.05 .080 1.95 .077 .161 .154 .062 .060 1.85 .072 1.65 .065 1.32 .051 1.12 .045 3.55 .139 3.45 .136 .326 .312 FEED DIRECTION .161 .154 .043 .036 0.35 .013 0.25 .010 178.00 7.008 MAX. 9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541. Data specifications subject change without notice. WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/03 Other recent searchesSDS2100 - SDS2100 SDS2100 Datasheet PE4230 - PE4230 PE4230 Datasheet OSTA51B1SH - OSTA51B1SH OSTA51B1SH Datasheet IXFR24N100 - IXFR24N100 IXFR24N100 Datasheet HT761X - HT761X HT761X Datasheet CER0041A - CER0041A CER0041A Datasheet
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