IRF7201 HEXFET® Power MOSFET Generation Technology Ultra On-

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IRF7201 HEXFET® Power MOSFET Generation Technology Ultra On-

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91100D
IRF7201
HEXFET® Power MOSFET
Generation Technology Ultra On-Resistance N-Channel MOSFET Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching Description
VDSS
RDS(on) 0.030
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Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
SO-8
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain- Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
0.02
Units
W/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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08/15/03
IRF7201
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.024
Max. Units Conditions 250µA V/°C Reference 25°C, 0.030 10V, 7.3A 0.050 4.5V, 3.7A VGS, 250µA 15V, 2.3A 24V, 24V, 125°C -100 -20V 4.6A 10V, Fig. 4.6A 3.2, 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 4.6A, 25°C, 4.6A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. (See fig.
4.6A, di/dt 120A/µs, V(BR)DSS,
150°C
15V, starting 25°C, 6.6mH
4.6A. (See Figure
Pulse width 300µs; duty cycle When mounted inch square copper board, t<10
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IRF7201
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
25°C 150°C
Reverse Drain Current
150°C 25°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
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IRF7201
DS(on) Drain-to-Source Resistance
DS(on) Drain-to-Source Resistance (Normalized)
4.6A
0.20
0.15
0.10
4.5V
0.05
0.00
Junction Temperature (°C)
Drain Current
Normalized On-Resistance Temperature
On-Resistance Drain Current
DS(on) Drain-to-Source Resistance
Single Pulse Avalanche Energy (mJ)
0.05
BOTTOM
2.1A 3.7A 4.6A
0.04
0.03
7.3A
0.02
Gate-to-Source Voltage
Starting Junction Temperature (°C)
On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
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IRF7201
1000
Ciss
Coss
Gate-to-Source Voltage
1MHz SHORTED
4.6A
Capacitance (pF)
Crss
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.00001 0.0001 0.001 0.01 Notes: Duty factor Peak thJA
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7201
SO-8 Package Details
INCHES .0532 .0040 .014 .0075 .189 .150 .0688 .0098 .018 .0098 .196 .157
MILLIMETERS 1.35 0.10 0.36 0.19 4.80 3.81 1.75 0.25 0.46 0.25 4.98 3.99
0.25 (.010)
0.10 (.004)
.050 BASIC .025 BASIC .2284 .011 0.16 .2440 .019 .050
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 6.20 0.48 1.27
0.25 (.010) NOTES:
RECOMMENDED FOOTPRINT 0.72 (.028
DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS SHOWN MILLIMETERS (INCHES). OUTLINE CONFORMS JEDEC OUTLINE MS-012AA.
DIMENSION DOES INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS EXCEED 0.25 (.006). DIMENSIONS LENGTH LEAD SOLDERING SUBSTRATE.
6.46 .255
1.78 (.070)
1.27 .050
SO-8 Part Marking
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IRF7201
SO-8 Tape Reel
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.08/03
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IRF7201 HEXFET® Power MOSFET Generation Technology Ultra On-

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