RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE) Part Numb

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE) Part Numb

Datasheet Thumbnail

Top Searches for this datasheet

90883B
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE)
Part Number Radiation Level IRH7054 100K Rads (Si) IRH3054 300K Rads (Si) IRH4054 600K Rads (Si) IRH8054 1000K Rads (Si) DS(on) 0.025 0.025 0.025 0.025
IRH7054 60V, N-CHANNEL
Hard HEXFET TECHNOLOGY
45*A 45*A 45*A 45*A
TO-204AE
International Rectifiers RADHard HEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page *Current limited diameter
Pre-Irradiation
Units
W/°C
V/ns
0.063 in.(1.6mm) from case 10s) 11.5 (Typical
www.irf.com
8/9/01
IRH7054
Pre-Irradiation
25°C (Unless Otherwise Specified)
Electrical Characteristics
Parameter
Units
0.053 0.025 0.028 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= ,VGS=0V 48V, 125°C -20V =12V, =30V, =12V, 2.35
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in from package) Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4100 2000
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.83 0.12
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
www.irf.com
Radiation Characteristics Pre-Irradiation
IRH7054
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
-100 0.027 0.027
1000K Rads (Si)
Units Units
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on)
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-204AE) Diode Forward Voltage"
1.25
-100 0.027 0.027
1.0mA VDS, 1.0mA VDS=48V, 12V, =45A 12V, =45A
Part numbers IRH7054, Part number IRH3054, IRH4540 IRH8054
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
Energy MeV/(mg/cm (MeV) 59.9 36.8 Range (µm) 32.8
VDS(V)
@VGS=0V @VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
www.irf.com
IRH7054
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
Pre-Irradiation
IRH7054
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
6000
Ciss
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRH7054
Pre-Irradiation
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
Pre-Irradiation
IRH7054
1200
Single Pulse Avalanche Energy (mJ)
BOTTOM
1000
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRH7054
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, L=0.49mH Peak 35A, =12V 35A, di/dt 150A/µs, 60V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-204AE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 08/01
www.irf.com

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE) Part Numb

Top Searches for this datasheet

Other recent searches