COLLECTOR Symbol VCEO BC635 BC637 BC639 Collector-Base Voltage BC635 B

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

COLLECTOR Symbol VCEO BC635 BC637 BC639 Collector-Base Voltage BC635 B

Datasheet Thumbnail

Top Searches for this datasheet

BC635, BC637, BC639, BC639-16 High Current Transistors
COLLECTOR Symbol VCEO BC635 BC637 BC639 Collector-Base Voltage BC635 BC637 BC639 Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range VEBO Tstg +150 mW/°C mW/°C VCBO
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Value Unit BASE
EMITTER
TO-92 (TO-226AA) CASE STYLE
ORDERING INFORMATION
Device Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 2000/Tape Reel 2000/Ammo Pack 5000 Units/Box 5000 Units/Box 2000/Tape Reel 2000/Ammo Pack 2000/Ammo Pack Unit °C/W °C/W
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol 83.3
BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1 BC639-16ZL1
Semiconductor Components Industries, LLC, 2001
June, 2000 Rev.
Publication Order Number: BC635/D
BC635, BC637, BC639, BC639-16
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage mAdc, V(BR)CEO BC635 BC637 BC639 V(BR)CES V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO nAdc µAdc
Collector-Emitter Zero-Gate Breakdown Voltage mAdc, BC639-16 Collector-Base Breakdown Voltage µAdc,
Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, 125°C)
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) BC635 BC637 BC639 BC639-16ZLT1 VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Pulse Test: Pulse Width Duty Cycle 2.0%.
BC635, BC637, BC639, BC639-16
1000 COLLECTOR CURRENT (mA) 25°C 25°C BC635 BC637 BC639 25°C 25°C hFE, CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
1000
Figure Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)
Figure Current Gain
VOLTAGE (VOLTS)
VCE(sat) IC/IB
VBE(sat) IC/IB VBE(on)
CURRENT-GAIN
COLLECTOR CURRENT (mA)
1000
COLLECTOR CURRENT (mA)
1000
Figure Current-Gain Bandwidth Product
Figure "Saturation" "On" Voltages
TEMPERATURE COEFFICIENTS (mV/°C)
-0.2
-1.0 VOLTS +100°C
-1.6
-2.2
COLLECTOR CURRENT (mA)
1000
Figure Temperature Coefficients
BC635, BC637, BC639, BC639-16
PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR PACKAGE BEYOND DIMENSION UNCONTROLLED. LEAD DIMENSION UNCONTROLLED BEYOND DIMENSION MINIMUM. INCHES 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -0.250 -0.080 0.105 -0.100 0.115 -0.135 -MILLIMETERS 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -6.35 -2.04 2.66 -2.54 2.93 -3.43
SECTION
STYLE EMITTER COLLECTOR BASE
Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center Semiconductor P.O. 5163, Denver, Colorado 80217 Phone: 303-675-2175 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com Semiconductor Website: http://onsemi.com additional information, please contact your local Sales Representative.
BC635/D

COLLECTOR Symbol VCEO BC635 BC637 BC639 Collector-Base Voltage BC635 B

Top Searches for this datasheet

Other recent searches