NOISE, HIGH LINEARITY PACKAGED PHEMT FEATURES Output Power 1-dB Compre
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LP750SOT89
NOISE, HIGH LINEARITY PACKAGED PHEMT FEATURES Output Power 1-dB Compression Power Gain Noise Figure Output Power-Added Efficiency
DESCRIPTION APPLICATIONS LP750SOT89 packaged Aluminum Gallium Arsenide Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). utilizes 0.25 Schottky barrier gate, defined electron-beam photolithography. recessed "mushroom" gate structure minimizes parasitic gate-source gate resistance. epitaxial structure processing have been optimized reliable high-power applications. LP750 also features Si3N4 passivation available form other packages. Typical applications include drivers output stages PCS/Cellular amplifiers, WLAN systems, other types wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS TAmbient 25°C
Parameter Saturated Drain-Source Current LP750SOT89-1 LP750SOT89-2 Power 1-dB Compression Power Gain 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude frequency=1.8 P-1dB G-1dB IMAX IGSO |VBDGS| |VBDGD| IDSS IDSS IDSS; IDSS IDSS; -0.25 Symbol IDSS Test Conditions 15.5 -1.2 -2.0 Units
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/18/02 Email: sales@filss.com
LP750SOT89
NOISE, HIGH LINEARITY PACKAGED PHEMT ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: Symbol TSTG PTOT Test Conditions TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient IDSS 1.75 Units
Operating conditions that exceed Absolute Maximum Ratings could result permanent damage device. Power Dissipation defined PTOT (PDC PIN) POUT, where PDC: Bias Power PIN: Input Power POUT: Output Power Absolute Maximum Power Dissipation de-rated follows above 25°C: PTOT= 1.75W (0.012W/°C) TPACK where TPACK source lead temperature
This PHEMT susceptible damage from Electrostatic Discharge. Proper precautions should used when handling these devices.
OPTIMUM POWER OUTPUT MATCHING
Load State Frequency (GHz) Magnitude 0.39 0.37 0.43 Phase -168° -147° -135°
HANDLING PRECAUTIONS avoid damage devices care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly, testing. These devices should treated Class (0-500 Further information control measures found MIL-STD-1686 MIL-HDBK-263. APPLICATIONS NOTES DESIGN DATA Applications Notes available from your local Filtronic Sales Representative directly from factory. Complete design data, including S-parameters, noise data, large-signal models available Filtronic site.
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/18/02 Email: sales@filss.com
LP750SOT89
NOISE, HIGH LINEARITY PACKAGED PHEMT PACKAGE OUTLINE
(dimensions inches)
information specifications subject change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/02 Email: sales@filss.com
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