General Purpose High Current Transistor Array CA3083 versatile ar
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CA3083
General Purpose High Current Transistor Array
CA3083 versatile array five high current 100mA) transistors common monolithic substrate. addition, these transistors matched current (i.e., 1mA) applications which offset parameters special importance. Independent connections each transistor plus separate terminal substrate permit maximum flexibility circuit design.
September 1996
Features
High 100mA (Max) 50mA) 0.7V (Max) Matched Pair (VBE Match) .±5mV (Max) 1mA) 2.5µA (Max) Independent Transistors Plus Separate Substrate Connection
Applications
Signal Processing Switching Systems Operating from Lamp Relay Driver Differential Amplifier Temperature Compensated Amplifier Thyristor Firing Application Note AN5296 "Applications CA3018 Circuit Transistor Array" Suggested Applications
Ordering Information
PART NUMBER (BRAND) CA3083 CA3083F CA3083M (3083) CA3083M96 (3083) TEMP. RANGE (oC) PACKAGE PDIP CERDIP SOIC PKG. E16.3 F16.3 M16.15
SOIC Tape Reel
M16.15
Pinout
CA3083 (PDIP, CERDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
481.3
CA3083
Absolute Maximum Ratings
following ratings apply each transistor device: Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current (IC) 100mA Base Current (IB) 20mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) CERDIP Package PDIP Package SOIC Package Maximum Power Dissipation (Any Transistor) 500mW Maximum Junction Temperature (Hermetic Package) 175oC Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range .-65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3083 isolated from substrate integral diode. substrate must connected voltage which more negative than collector voltage order maintain isolation between transistors provide normal transistor action. avoid undesired coupling between transistors, substrate Terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground. measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER EACH TRANSISTOR
Equipment Design, 25oC SYMBOL TEST CONDITIONS UNITS
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff-Current Collector-Cutoff-Current Forward-Current Transfer Ratio (Note (Figure
V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICEO ICBO
100µA, 1mA, 100µA, 500µA, 10V, 10V, 10mA 50mA
0.65
0.74 0.40
0.85 0.70
Base-to-Emitter Voltage (Figure Collector-to-Emitter Saturation Voltage (Figures Gain Bandwidth Product
10mA 50mA, 10mA
TRANSISTORS Differential Amplifier) Absolute Input Offset Voltage (Figure Absolute Input Offset Current (Figure NOTE: Actual forcing current emitter this test. |VIO| |IIO|
CA3083 Typical Performance Curves
FORWARD CURRENT TRANSFER RATIO 70oC 25oC BASE-TO-EMITTER VOLTAGE 25oC 70oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE
FIGURE
25oC COLLECTOR-TO-EMITTER SATURATION VOLTAGE
70oC
COLLECTOR-TO-EMITTER SATURATION VOLTAGE
MAXIMUM TYPICAL COLLECTOR CURRENT (mA)
MAXIMUM TYPICAL
COLLECTOR CURRENT (mA)
FIGURE
FIGURE
25oC
ABSOLUTE INPUT OFFSET VOLTAGE (mV)
25oC
BASE-TO-EMITTER SATURATION VOLTAGE
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE
FIGURE (TRANSISTORS DIFFERENTIAL AMPLIFIER)
CA3083 Typical Performance Curves
(Continued)
ABSOLUTE INPUT OFFSET CURRENT (µA)
25oC
COLLECTOR CURRENT (mA)
FIGURE (TRANSISTORS DIFFERENTIAL AMPLIFIER)
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
Sales Office Headquarters
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