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Cautions
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2SK1401, 2SK1401A
Silicon N-Channel
ADE-208-1281 1st. Edition Mar. 2001 Application
High speed power switching
Features
on-resistance High speed switching drive current secondary breakdown Suitable switching regulator DC-DC converter
Outline
TO-3P
Gate Drain (Flange) Source
2SK1401, 2SK1401A
Absolute Maximum Ratings 25°C)
Item Drain source voltage 2SK1401 2SK1401A Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C VGSS D(pulse)* Pch* Tstg
Symbol VDSS
Ratings +150
Unit
2SK1401, 2SK1401A
Electrical Characteristics 25°C)
Item Drain source breakdown voltage K1401 K1401A V(BR)GSS Symbol V(BR)DSS ±100 VGS(off) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) 0.25 0.30 1250 1.05 0.35 0.40 diF/dt A/µs 3.75 Unit Test conditions
Gate source breakdown voltage Gate source leak current Zero gate voltage drain current K1401 K1401A
Gate source cutoff voltage Static drain source K1401 state resistance K1401A
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test
2SK1401, 2SK1401A
Power Temperature Derating Channel Dissipation Maximum Safe Operation Area
Drain Current
25°C
2SK1401 2SK1401A
Case Temperature (°C)
1,000 Drain Source Voltage
Typical Output Characteristics Drain Current Drain Current Pulse Test Drain Source Voltage
Typical Transfer Characteristics Pulse Test
75°C 25°C -25°C Gate Source Voltage
2SK1401, 2SK1401A
Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage (on) Pulse Test Static Drain Source State Resistance (on) Pulse Test Static Drain Source State Resistance Drain Current
Gate Source Voltage
Drain Current
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Pulse Test Forward Transfer Admittance
Forward Transfer Admittance Drain Current Pulse Test 75°C 25°C -25°C
Case Temperature (°C)
Drain Current
2SK1401, 2SK1401A
Body Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) 10,000 Capacitance (pF) Ciss 1,000 Coss Typical Capacitance Drain Source Voltage
Pulse Test di/dt A/µs, 25°C Reverse Drain Current
Crss Drain Source Voltage
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage
Switching Characteristics duty (off) (on)
Gate Charge (nc)
Switching Time (ns)
Drain Current
2SK1401, 2SK1401A
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width 0.05 0.02 0.01 ch-c ch-c ch-c 1.25°C/W, 25°C 25°C
0.03
0.01
Pulse Width
Switching Time Test Circuit Monitor Vout Monitor D.U.T Vout
Waveforms
(off)
(on)
2SK1401, 2SK1401A
Package Dimensions January, 2001
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms
2SK1401, 2SK1401A
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
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further information write
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Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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