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Cautions Keep safety first your circuit designs! Renesas Technolo
Top Searches for this datasheetCautions Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. 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Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein. 2SC5218 Silicon Epitaxial ADE-208-279A 2nd. Edition Mar. 2001 Application wide band amplifier Features High gain bandwidth product High gain, noise figure 13.0 typ, Outline MPAK Emitter Base Collector Note: Marking "YK-". Attention: This device very sensitive electro static discharge. recommended adopt appropriate cautions when handling this transistor. 2SC5218 Absolute Maximum Ratings 25°C) Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg Ratings +150 Unit Electrical Characteristics 25°C) Item Collector base breakdown voltage Collector cutoff current Symbol V(BR)CBO Emitter cutoff current current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Unit Test conditions 2SC5218 Current Transfer Ratio Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation (mW) Current Transfer Ratio Pulse Test Collector Current (mA) Ambient Temperature (°C) Gain Bandwidth Product (GHz) Collector Output Capacitance (pF) Gain Bandwidth Product Collector Current Collector Output Capacitance Collector Base Voltage Collector Current (mA) Collector Base Voltage 2SC5218 Power Gain Collector Current Power Gain (dB) Noise Figure (dB) Noise Figure Collector Current Collector Current (mA) Collector Current (mA) Parameter (dB) Parameter Collector Current Collector Current (mA) 2SC5218 Parameter Frequency -1.5 -120° -90° -60° 180° 150° Parameter Frequency 120° Scale: div. -150° -30° Condition: 1000 (100 step) Condition: 1000 (100 step) Parameter Frequency 120° Parameter Frequency Scale: 0.04 div. 150° 180° -150° -30° -120° -90° -60° -1.5 Condition: 1000 (100 step) Condition: 1000 (100 step) 2SC5218 Parameter (VCE Freq. (MHz) 1000 MAG. 0.817 0.701 0.602 0.536 0.495 0.468 0.447 0.434 0.423 0.428 ANG. -34.7 -64.5 -88.3 -106 -120 -132 -141 -150 -157 -164 MAG. 14.1 11.6 9.32 7.61 6.40 5.50 4.80 4.27 3.83 3.50 ANG. 99.5 94.9 90.9 87.2 83.9 MAG. 0.034 0.058 0.073 0.083 0.091 0.097 0.104 0.110 0.117 0.124 ANG. 72.3 59.8 52.9 49.8 48.9 49.3 50.0 50.9 52.1 53.3 MAG. 0.916 0.761 0.620 0.520 0.447 0.396 0.357 0.327 0.305 0.287 ANG. -19.8 -34.8 -43.9 -49.3 -52.5 -54.5 -55.7 -56.5 -57.5 -58.4 Parameter (VCE Freq. (MHz) 1000 MAG. 0.529 0.427 0.386 0.370 0.366 0.367 0.364 0.360 0.362 0.364 ANG. -70.4 -111 -134 -150 -159 -167 -174 -179 MAG. 29.9 19.0 13.4 10.2 8.28 6.96 6.01 5.28 4.71 4.27 ANG. 98.0 93.7 89.7 87.0 84.2 81.7 79.3 MAG. 0.025 0.038 0.048 0.058 0.069 0.080 0.091 0.102 0.115 0.126 ANG. 64.9 60.3 61.8 64.3 66.6 67.8 68.7 69.5 69.4 69.6 MAG. 0.716 0.462 0.330 0.260 0.214 0.184 0.162 0.146 0.133 0.123 ANG. -39.8 -56.6 -63.2 -66.2 -67.8 -68.8 -69.1 -69.7 -70.4 -71.5 2SC5218 Package Dimensions January, 2001 Unit: 0.65 0.10 0.05 0.16 0.06 0.10 0.15 0.95 0.95 2.95 0.65 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK Conforms 0.011 2SC5218 Cautions Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Hitachi, Ltd. Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica Europe Asia Japan http://sicapac.hitachi-asia.com Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk further information write Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan. 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