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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
BB504C
Build Biasing Circuit VHF&UHF Amplifier
ADE-208-983D 5th. Edition Dec. 2000 Features
Build Biasing Circuit; reduce using parts cost board space. noise; typ. MHz,NF =1.75 typ. =900 High gain; typ. MHz, typ. Withstanding ESD; Build absorbing diode. Withstand conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
Source Gate1 Gate2 Drain
Notes:
Marking "DS-". BB504C individual type number HITACHI BBFET.
BB504C
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate1 source breakdown voltage Gate2 source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS 0.85 0.85 0.027 1.75 +100 +100 0.05 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S +10µA, VG1S VG1S +5V, VG2S +5V, VG2S 100µA VG1S 100µA VG2S 120k VG2S 120k, 1kHz VG2S =4V, 120k 1MHz VG2S =4V, 120k 200MHz VG2S =4V, 120k 900MHz
Gate1 source cutoff current G1SS Gate2 source cutoff current G2SS Gate1 source cutoff voltage VG1S(off) Gate2 source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure D(op) |yfs|
BB504C
Test Circuits
Biasing Circuit Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss,
Gate Gate
Drain
Source
200MHz Power Gain, Noise Figure Test Circuit
1000p 1000p 1000p
Input(50) 1000p
1000p
BBFET 1000p
Output(50)
1000p 1SV70 120k
1SV70
1000p Unit Resistance Capacitance
Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 5mm, 2Turns
BB504C
Power Gain, Noise Figure Test Circuit
Output
Input
Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Capacitor (1000pF)
(1mm Copper wire) Unit:mm
Copper wire with enamel 4turns inside
BB504C
Maximum Channel Power Dissipation Curve Typical Output Characteristics
(mW)
(mA)
Channel Power Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
Forward Transfer Admittance (mS)
Drain Current Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
(mA)
Drain Current
VG2S
VG2S
Gate1 Voltage
Gate1 Voltage
BB504C
Power Gain Gate Resistance Noise Figure Gate Resistance 200MHz
Power Gain (dB)
Noise Figure (dB)
1000 Gate Resistance
1000 Gate Resistance
Power Gain Gate Resistance
Noise Figure Gate Resistance
Power Gain (dB)
Noise Figure (dB)
1000 Gate Resistance
1000 Gate Resistance
BB504C
Input Capacitance Gate2 Source Voltage Input Capacitance Ciss (pF)
Drain Current (mA)
Drain Current Gate Resistance
1000 Gate Resistance
Gate2 Source Voltage
Gain Reduction Gate2 Source Voltage Gain Reduction (dB) Gain Reduction (dB)
Gain Reduction Gate2 Source Voltage
200MHz
900MHz
Gate2 Source Voltage
Gate2 Source Voltage
BB504C
Parameter Frequency
120° 180° 150°
Parameter Frequency
120°
Scale: div.
150°
Test Condition: VG2S 1000 step)
Test Condition: VG2S 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.004/ div.
150°
180°
150° 120°
Test Condition: VG2S 1000 step)
Test Condition: VG2S 1000 step)
BB504C
Sparameter (VDS VG2S 120k,
(MHz) 1000 1.000 0.993 0.991 0.984 0.978 0.970 0.958 0.954 0.945 0.932 0.920 0.910 0.900 0.887 0.870 0.863 0.853 0.839 0.827 0.819 -3.3 -7.2 -10.9 -15.0 -19.0 -22.8 -26.7 -30.3 -33.8 -37.5 -40.6 -44.3 -47.5 -50.9 -54.4 -57.6 -60.9 -63.6 -66.5 -70.1 2.80 2.78 2.77 2.74 2.72 2.68 2.64 2.60 2.56 2.50 2.46 2.41 2.37 2.31 2.27 2.22 2.18 2.12 2.07 2.04 175.9 170.9 166.1 161.2 156.5 151.8 147.2 142.7 138.6 134.1 129.8 125.7 121.6 117.8 113.6 110.0 105.8 102.2 98.6 94.9 0.00106 0.00171 0.00253 0.00356 0.00442 0.00485 0.00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.00716 0.00667 58.8 75.7 75.1 77.4 78.2 80.0 74.7 71.7 73.3 71.8 70.7 69.9 69.1 67.8 70.8 73.3 75.2 75.8 88.1 92.7 0.990 0.992 0.991 0.987 0.985 0.982 0.978 0.973 0.968 0.963 0.958 0.952 0.947 0.942 0.936 0.929 0.924 0.917 0.912 0.906 -2.4 -4.7 -7.2 -9.6 -12.2 -14.7 -17.1 -19.6 -22.0 -24.2 -26.7 -28.9 -31.3 -33.4 -35.8 -37.9 -40.3 -42.5 -44.5 -46.7
BB504C
Package Dimentions
Unit:
0.05 0.05
0.425
0.65 0.65
0.16- 0.06
1.25
0.65 1.25
0.425
0.05
0.05
Hitachi Code JEDEC EIAJ Mass (reference value)
CMPAK-4(T) Conforms 0.006
BB504C
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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http://sicapac.hitachi-asia.com
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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