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Cautions
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2SJ550(L), 2SJ550(S)
Silicon Channel High Speed Power Switching
ADE-208-633A 2nd. Edition Jul. 1998 Features
on-resistance DS(on) 0.075 typ. drive current. gate drive devices. High speed switching.
Outline
LDPAK
Gate Drain Source Drain
2SJ550(L),2SJ550(S)
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS D(pulse)
Note3 Note3 Note2 Note1
Ratings +150
Unit
Tstg
10µs, duty cycle Value 25°C Value 25°C,
2SJ550(L),2SJ550(S)
Electrical Characteristics 25°C)
Item Symbol -1.0 0.075 0.105 -1.1 -2.0 0.095 0.155 Unit -15A, -15A, diF/ =50A/µs Test Conditions -10mA, ±100µA, ±16V, -1mA, -10V -8A, -10V Note4 -8A, Note4 -8A, -10V Note4 -10V 1MHz -10V, 3.75 Drain source breakdown voltage V(BR)DSS Gate source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test
2SJ550(L),2SJ550(S)
Main Characteristics
Power Temperature Derating 1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on)
(°C)
Case Temperature
Drain Source Voltage
Typical Output Characteristics Pulse Test -3.5 Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
-2.5
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
2SJ550(L),2SJ550(S)
Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Saturation Voltage DS(on)
Pulse Test
-3.2
-2.4
-1.6 -0.8 Gate Source Voltage
Drain Source State Resistance DS(on)
-4.0
0.03 0.01 -0.1 -0.3
Drain Current
-100
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature 0.40 Pulse Test 0.32
Forward Transfer Admittance Drain Current Pulse Test
0.24
-10,
0.16
0.08
(°C)
-0.1 -0.3
-100
Case Temperature
Drain Current
2SJ550(L),2SJ550(S)
Body-Drain Diode Reverse Recovery Time Typical Capacitance Drain Source Voltage Ciss
Reverse Recovery Time (ns)
10000 3000 1000
Capacitance (pF)
Coss
-0.1 -0.3 Reverse Drain Current
Crss Drain Source Voltage
Dynamic Input Characteristics
1000
Switching Characteristics
Switching Time (ns)
duty d(on) -0.1 -0.2 -0.5
Drain Source Voltage
Gate Source Voltage
d(off)
-100
Gate Charge
(nc)
Drain Current
2SJ550(L),2SJ550(S)
Reverse Drain Current Source Drain Voltage Maximum Avalanche Energy Channel Temperature Derating duty
Repetitive Avalanche Energy (mJ)
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Channel Temperature (°C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS
Monitor
Monitor
(BR)DSS
2SJ550(L),2SJ550(S)
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) °C/W,
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Waveform
Vout td(on) td(off)
2SJ550(L),2SJ550(S)
Package Dimensions January, 2001
Unit:
(1.4) 4.44 0.15
10.2
11.3
10.0
1.27 0.86 0.76 2.54
11.0
2.59
2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK
2SJ550(L),2SJ550(S)
January, 2001
Unit:
4.44 (1.4) 10.2 0.15
10.0
(1.5)
(1.5)
1.27 2.54 2.54
0.86
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK (S)-(1)
2SJ550(L),2SJ550(S)
January, 2001
Unit:
4.44 (1.4) 10.2
10.0
(1.5)
(1.5)
1.27 2.54
2.54
0.86
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK (S)-(2) 1.35
2SJ550(L),2SJ550(S)
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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