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Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SJ549(L), 2SJ549(S)
Silicon Channel High Speed Power Switching
ADE-208-644A 2nd. Edition Jul. 1998 Features
on-resistance DS(on) 0.11 typ. drive current gete drive devices High speed switching
Outline
LDPAK
Gate Drain Source Drain
2SJ549(L),2SJ549(S)
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS D(pulse)
Note3 Note3 Note2 Note1
Ratings +150
Unit
Tstg
10µs, duty cycle Value 25°C Value 25°C,
2SJ549(L),2SJ549(S)
Electrical Characteristics 25°C)
Item Symbol -1.0 0.11 0.16 -1.2 -2.0 0.15 0.23 Unit -12A, -12A, diF/ 50A/µs Test Conditions -10mA, ±100µA, ±16V, -1mA, -10V -6A, -10V Note4 -6A, Note4 -6A, -10V -10V 1MHz -10V,
Note4
Drain source breakdown voltage V(BR)DSS Gate source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test
2SJ549(L),2SJ549(S)
Main Characteristics
Power Temperature Derating
-100
Maximum Safe Operation Area
-0.5
Channel Dissipation
Drain Current
Operation this area limited DS(on)
(°C)
Case Temperature
-0.2 -0.1 -0.1 -0.3 -100 Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
-3.5 Pulse Test
Drain Current
Drain Current
Gate Source Voltage
-2.5
Drain Source Voltage
2SJ549(L),2SJ549(S)
Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current
Drain Source Saturation Voltage DS(on)
Pulse Test
-0.8
-0.6
-0.4 -0.2
Drain Source State Resistance DS(on)
-1.0
0.05
0.02 0.01
-0.1 -0.3
Pulse Test
-100
Gate Source Voltage
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current -0.1 -0.2 Pulse Test -0.5 Drain Current
Case Temperature (°C)
2SJ549(L),2SJ549(S)
Body-Drain Diode Reverse Recovery Time Typical Capacitance Drain Source Voltage Ciss Coss Drain Source Voltage Crss
2000 1000
Reverse Recovery Time (ns)
-0.1 -0.2 -0.5 Reverse Drain Current
Dynamic Input Characteristics
Capacitance (pF)
Switching Characteristics
1000 -0.1 -0.2 duty d(off) d(on)
Drain Source Voltage
-100
Gate Charge (nc)
Gate Source Voltage
Switching Time (ns)
-0.5 Drain Current
2SJ549(L),2SJ549(S)
Reverse Drain Current Source Drain Voltage
Repetitive Avalanche Energy (mJ)
Maximum Avalanche Energy Channel Temperature Derating duty
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Channel Temperature (°C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS
Monitor
Monitor
(BR)DSS
2SJ549(L),2SJ549(S)
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermao Impedance 25°C
0.05
c(t) °C/W,
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Waveform
Vout td(on) td(off)
2SJ549(L),2SJ549(S)
Package Dimensions January, 2001
Unit:
(1.4) 4.44 0.15
10.2
11.3
10.0
1.27 0.86 0.76 2.54
11.0
2.59
2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK
2SJ549(L),2SJ549(S)
January, 2001
Unit:
4.44 (1.4) 10.2 0.15
10.0
(1.5)
(1.5)
1.27 2.54 2.54
0.86
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK (S)-(1)
2SJ549(L),2SJ549(S)
January, 2001
Unit:
4.44 (1.4) 10.2
10.0
(1.5)
(1.5)
1.27 2.54
2.54
0.86
Hitachi Code JEDEC EIAJ Mass (reference value)
LDPAK (S)-(2) 1.35
2SJ549(L),2SJ549(S)
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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