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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SC4126
Silicon Epitaxial
Application
wide band amplifier
Outline
MPAK-4
Collector Emitter Base Emitter
2SC4126
Absolute Maximum Ratings 25°C)
Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg Ratings +150 Unit
Electrical Characteristics 25°C)
Item Collector base breakdown voltage Collector cutoff current Symbol V(BR)CBO Emitter cutoff current current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking "MI-". 11.0 Unit Test conditions
2SC4126
Maximum Collector Dissipation Curve Collector Power Dissipation (mW) Collector Current (mA) Typical Output Characteristics Pulse
Ambient Temperature (°C)
Collector Emitter Voltage
Current Transfer Ratio Collector Current Gain Bandwidth Product (GHz) Current Transfer Ratio Pulse
Gain Bandwidth Product Collector Current
Collector Current (mA)
Collector Current (mA)
2SC4126
Collector Output Capacitance Collector Base Voltage Collector Output Capacitance (pF) Power Gain (dB) Power Gain Collector Current
Collector Base Voltage
Collector Current (mA)
Noise Figure Collector Current Noise Figure (dB)
Collector Current (mA)
2SC4126
Parameters (Emitter Common)
Test condition Freq. 1000 (100 Step)
S11-Frequency 1000 -0.2 -180° 150° 1000 120° S21-Frequency Scale 10/div
-150°
-30°
-0.4 -0.6 -0.8
-1.5
-120° -90°
-60°
S12-Frequency 120° Scale 0.4/div 150° 1000 -180°
-Frequency 1000
-0.2 -150° -30° -0.4 -120° -90° -60° -0.6 -0.8 -1.5
2SC4126
Parameters (Emitter Common)
Test condition
Freq. (MHz) 1000 0.798 0.659 0.550 0.480 0.438 0.414 0.410 0.406 0.412 0.424
(DEG.) -37.3 -69.4 -93.7 -113.6 -129.8 -143.6 -154.4 -164.7 -174.9 -178.1 13.345 10.696 8.434 6.815 5.684 4.847 4.229 3.750 3.352 3.071 (DEG.) 152.3 131.4 117.0 107.3 100.0 94.2 89.4 85.0 81.0 77.4 0.033 0.054 0.067 0.074 0.081 0.087 0.092 0.098 0.104 0.110 (DEG.) 69.6 56.0 49.2 47.3 47.0 47.3 48.6 49.5 50.6 51.6 0.898 0.730 0.592 0.502 0.442 0.399 0.366 0.340 0.317 0.299 (DEG.) -20.1 -33.1 -39.3 -42.3 -43.7 -44.4 -45.3 -46.3 -47.4 -48.3 Gmax* (dB) 34.03 26.37 21.96 19.07 16.96 15.28 13.95 12.80 11.78 11.01
Test condition
Freq. (MHz) 1000 Note: 0.501 0.402 0.368 0.347 0.354 0.358 0.370 0.380 0.400 0.411
(DEG.) -75.1 -117.1 -141.0 -157.6 -169.0 -178.7 174.9 167.1 161.5 157.0
26.789 16.600 11.543 8.823 7.131 5.979 5.158 4.536 4.042 3.677
(DEG.) 131.8 111.1 100.7 94.7 89.5 85.8 82.3 79.2 76.5 73.5
0.024 0.035 0.044 0.054 0.063 0.074 0.084 0.094 0.104 0.114
(DEG.) 62.2 58.5 61.3 63.3 65.0 66.6 66.9 67.3 67.6 67.4
0.683 0.446 0.337 0.282 0.250 0.228 0.208 0.192 0.178 0.165
(DEG.) -36.5 -45.4 -45.6 -44.2 -42.8 -42.1 -42.1 -42.7 -43.2 -43.3
Gmax* (dB) 32.54 26.13 22.40 19.83 17.92 16.36 15.08 13.98 13.03 12.24
Gmax
2SC4126
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Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
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