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Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SK2685
GaAs HEMT
ADE-208-400A 2nd. Edition Mar. 2001 Application
noise amplifier
Features
Excellent noise characteristics. Fmin 0.83dB (3V, 10mA, 2GHz) High associated gain. (3V, 10mA, 2GHz) High voltage. more voltage. Small package. (CMPAK-4)
Outline
CMPAK-4
Source Gate Source Drain
Note:
Marking "ZT-".
Attention This device very sensitive electro static discharge. recommended adopt apppropriate cautions when handling this transistor.
2SK2685
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Gate drain voltage Drain current Channel Power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO Tstg Ratings +125 Unit
Electrical Characteristics 25°C)
Item Gate source leak current Gate source cutoff voltage Drain source leak current Forward transfer admittance Associated gain Associated gain Associated gain Associated gain Minimum noise figure Minimum noise figure Minimum noise figure Minimum noise figure Symbol VGS(off) Fmin Fmin Fmin Fmin -0.3 17.0 15.2 21.4 19.7 0.83 1.08 0.52 0.74 -2.0 Unit Test conditions -6V, 100µA Pulse Test 10mA, 1kHz 10mA, 2GHz 3mA, 2GHz 10mA, 900MHz 3mA, 900MHz 10mA, 2GHz 3mA, 2GHz 10mA, 900MHz 3mA, 900MHz
2SK2685
Main Characteristics
Maximum Channel Power Dissipation Curve Typical Output Characteristics -0.1 -0.3
Channel Power Dissipation (mW)
-0.4
Drain Current (mA)
-0.5 Pulse Test
-0.6
-0.7
-0.8
-0.9
Drain Source Voltage
Ambient Temperature (°C)
Forward Transfer Admittance (mS)
Typical Transfer Characteristics Pulse Test
Forward Transfer Admittance Gate Source Voltage Pulse Test
Drain Current (mA)
-2.0
-1.6
-1.2
-0.8
-0.4
-2.0
-1.6
-1.2
-0.8
-0.4
Gate Source Voltage
Gate Source Voltage
2SK2685
Forward Transfer Admittance Drain Current Association Gain (dB) Pulse Test Associates Gain Drain Current
Forward Transfer Admittance (mS)
Drain Current (mA)
Drain Current (mA)
Minimun Noise Figure Fmin (dB)
Minimum Noise Figure Drain Current
Associated Gain (dB)
Associated Gain Drain Source Voltage
Drain Current (mA)
Drain Source Voltage
2SK2685
Minimum Noise Figure Drain Source Voltage Isolation (dB) Isolation Drain Current
Minimum Noise Figure Fmin (dB)
Drain Source Voltage
Drain Current (mA)
Isolation Drain Current Isolation (dB)
Drain Current (mA)
2SK2685
Parameter Frequency
-1.5 -120° -90° -60° 180° 150°
Parameter Frequency
120°
Scale: 0.02 div.
-150°
-30°
Condition: 2000 (200 step) (VDS (VDS
Condition: 2000 (200 step) (VDS (VDS
Parameter Frequency
120°
Parameter Frequency
Scale: div.
150°
180°
-150° -30° -120° -90° -60° -1.5
Condition: 2000 (200 step) (VDS (VDS
Condition: 2000 (200 step) (VDS (VDS
2SK2685
Parameter (VDS 10mA,
(MHz) 1000 1200 1400 1600 1800 2000 0.996 0.980 0.977 0.970 0.952 0.938 0.916 0.896 0.882 0.859 -4.8 -9.5 -15.0 -19.9 -24.4 -29.2 -34.0 -38.2 -42.9 -47.1 5.12 5.13 5.07 4.94 4.84 4.74 4.67 4.55 4.47 4.36 175.8 169.9 165.4 161.6 156.5 152.7 147.7 144.1 140.0 135.8 0.00691 0.0143 0.0210 0.0276 0.0399 0.0404 0.0462 0.0523 0.0578 0.0630 89.8 88.2 83.3 81.5 79.3 76.0 74.8 73.1 72.0 70.3 0.688 0.682 0.674 0.668 0.658 0.648 0.636 0.622 0.611 0.597 -3.2 -6.5 -10.6 -13.8 -17.2 -20.7 -23.7 -27.1 -29.9 -33.1
Parameter (VDS 10mA,
(MHz) 1000 1200 1400 1600 1800 2000 0.998 0.988 0.978 0.968 0.953 0.937 0.917 0.900 0.883 0.858 -4.0 -9.2 -14.5 -19.4 -24.2 -28.7 -33.3 -37.5 -41.9 -46.1 5.13 5.14 5.08 4.95 4.85 4.75 4.68 4.57 4.49 4.37 175.8 170.1 165.2 161.4 156.4 152.5 147.8 144.0 140.1 135.9 0.00581 0.0110 0.0163 0.0216 0.0363 0.0312 0.0358 0.0401 0.0442 0.0477 89.8 85.5 83.3 82.0 79.2 76.5 75.3 73.2 72.8 71.4 0.802 0.796 0.790 0.783 0.774 0.764 0.753 0.742 0.731 0.718 -3.2 -6.5 -9.8 -13.3 -16.4 -19.4 -22.5 -25.4 -28.1 -31.1
2SK2685
Package Dimensions January, 2001
Unit:
0.05 0.05
0.425
0.65 0.65
0.16- 0.06
1.25
0.65 1.25
0.425
0.05
0.05
Hitachi Code JEDEC EIAJ Mass (reference value)
CMPAK-4(T) Conforms 0.006
2SK2685
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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further information write
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Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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