Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
TBB1002
Twin Build Biasing Circuit VHF/UHF Amplifier
ADE-208-987F 7th. Edition Dec. 2000 Features
Small package CMPAK-6 built twin BBFET; reduce using parts cost board space. Suitable World Standard Tuner amplifier. Very useful total tuner cost reduction. Withstanding ESD; Build absorbing diode. Withstand conditions. Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
Gate-1(1) Source Drain(1) Drain(2) Gate-2 Gate-1(2)
Notes:
Marking "BM". TBB1002 individual type number HITACHI TWIN BBFET.
TBB1002
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg
Ratings +150
Unit
Notes: Value glass epoxy board (49mm 38mm 1mm).
Electrical Characteristics 25°C)
below specification applicable unit (FET1)
Item Drain source breakdown voltage Gate1 source breakdown voltage Gate2 source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS 0.75 0.75 0.02 +100 +100 0.04 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S +10µA, VG1S VG1S +5V, VG2S +5V, VG2S 100µA VG1S 100µA VG2S 100k VG2S 100k, 1kHz VG2S =4V, 100k 1MHz VG2S 100k, 900MHz Zi=S11*, Zo=S22*(:PG) Zi=S11opt (:NF)
Gate1 source cutoff current G1SS Gate2 source cutoff current G2SS Gate1 source cutoff voltage VG1S(off) Gate2 source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain D(op) |yfs|
Noise figure
TBB1002
Electrical Characteristics 25°C)
below specification applicable unit (FET2)
Item Drain source breakdown voltage Gate1 source breakdown voltage Gate2 source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS 0.75 0.75 0.03 +100 +100 0.05 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S +10µA, VG1S VG1S +5V, VG2S +5V, VG2S 100µA VG1S 100µA VG2S VG2S =4V, 82k, 1kHz VG2S =4V, 1MHz VG2S 82k, 200MHz
Gate1 source cutoff current G1SS Gate2 source cutoff current G2SS Gate1 source cutoff voltage VG1S(off) Gate2 source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure D(op) |yfs|
TBB1002
Test Circuits
Biasing Circuit Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss,
Measurment FET1 Gate Open Open
Gate Source Drain
Measurment FET2
Gate Gate Drain
Open Source
Open
TBB1002
Equivalent Circuit
No.1 Gate-1(1) BBFET-(1) No.2 Source BBFET-(2) No.5 Gate-2 No.6 Gate-1(2)
No.3 Drain(1)
No.4 Drain(2)
Power Gain, Noise Figure Test Circuit
1000p 1000p 1000p
Input(50) 1000p
1000p
TWINBBFET 1000p
Output(50)
1000p 1SV70
1SV70
1000p Unit Resistance Capacitance
Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 5mm, 2Turns
TBB1002
Maximum Channel Power Dissipation Curve Typical Output Characteristics (FET1) (mA)
Pch* (mW)
Channel Power Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
Value glass epoxy board (49mm 38mm 1mm)
(mA)
Forward Transfer Admittance (mS)
Drain Current Gate1 Voltage (FET1)
Forward Transfer Admittance Gate1 Voltage (FET1)
Drain Current
VG2S
Gate1 Voltage
Gate1 Voltage
TBB1002
Drain Current Gate Resistance (FET1) Input Capacitance Ciss (pF) Input Capacitance Gate2 Source Voltage (FET1)
Drain Current (mA)
1000
Gate Resistance
Gate2 Source Voltage
Typical Output Characteristics (FET2) (mA)
Drain Current Gate1 Voltage (FET2)
(mA)
Drain Current
Drain Current
VG2S
Drain Source Voltage
Gate1 Voltage
TBB1002
Forward Transfer Admittance Gate1 Voltage (FET2) Drain Current Gate Resistance (FET2)
Forward Transfer Admittance (mS)
Drain Current (mA)
1000
Gate1 Voltage
Gate Resistance
Input Capacitance Gate2 Source Voltage (FET2) Input Capacitance Ciss (pF)
Power Gain Gate Resistance (FET2)
Power Gain (dB)
1000 Gate Resistance
Gate2 Source Voltage
TBB1002
Noise Figure Gate Resistance (FET2) Gain Reduction (dB) Noise Figure (dB) Gain Reduction Gate2 Source Voltage (FET2)
1000 Gate Resistance
Gate2 Source Voltage
TBB1002
Package Dimensions
Unit:
0.425 0.65 0.65
0.15 0.05
1.25
6-0.2± 0.05
0.425
+0.2 -0.1
Hitachi code EIAJ code JEDEC code
CMPAK-6
TBB1002
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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