Cautions Keep safety first your circuit designs! Renesas Technolo

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Cautions Keep safety first your circuit designs! Renesas Technolo

Datasheet Thumbnail

Top Searches for this datasheet

Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SB861
Silicon Triple Diffused
ADE-208-862 1st. Edition September 2000 Application
frequency power amplifier color vertical deflection output complementary pair with 2SD1138
Outline
TO-220AB
Base Collector (Flange) Emitter
Absolute Maximum Ratings 25°C)
Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO C(peak) Junction temperature Storage temperature Note: Value 25°C Tstg
Rating -200 -150 +150
Unit
2SB861
Electrical Characteristics 25°C)
Item Symbol -150
Unit
Test conditions -120 -500 mA*2
Collector emitter breakdown V(BR)CBO voltage Emitter base breakdown voltage Collector cutoff current current transfer ratio V(BR)EBO hFE1* hFE2 Collector emitter saturation voltage Base emitter voltage Collector output capacitance VCE(sat)
-500 -100
Notes: 2SB861 grouped hFE1 follows. Pulse test
Maximum Collector Dissipation Curve Collector power dissipation Collector Current -1.0 -0.5 -0.2 -0.1 (-150 -0.05 -100 -200 Collector emitter Voltage (max) (Continuous)
Area Safe Operation
(-15
(-60 -0.4
Ambient temperature (°C) Case temperature (°C)
2SB861
Typical Output Characteristics -1.0 25°C Collector Current -0.8 Typical Transfer Characteristics -1,000 -500 Collector current (mA) 75°C -200 -100 Collector emitter Voltage -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 Base emitter voltage -1.0
-0.6
-0.4
-0.2
Current Transfer Ratio Collector Current Collector emitter saturation voltage (sat) current transfer ratio -100 -200 -500-1,000 Collector current (mA) 75°C
Collector Emitter Saturation Voltage Collector Current
-1.0 -0.5 75°C
-0.2 -0.1
-100 -200 -500-1,000 Collector current (mA)
2SB861
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

Cautions Keep safety first your circuit designs! Renesas Technolo

Top Searches for this datasheet

Other recent searches