Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions Keep safety first your circuit designs! Renesas Technolo

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Cautions
Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. Renesas Technology Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corporation without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corporation various means, including Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein.
2SB859
Silicon Triple Diffused
ADE-208-860 1st. Edition September 2000 Application
frequency power amplifier complementary pair with 2SD1135
Outline
TO-220AB
Base Collector (Flange) Emitter
Absolute Maximum Ratings 25°C)
Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Value 25°C Symbol VCBO VCEO VEBO C(peak) Tstg
Rating -100 +150
Unit
2SB859
Electrical Characteristics 25°C)
Item Symbol
-0.1 -1.5
Unit
Test conditions -0.1 -0.2 -0.5
Collector emitter breakdown V(BR)CEO voltage Emitter base breakdown voltage Collector cutoff current current transfer ratio V(BR)EBO hFE1* hFE2 Base emitter voltage Collector emitter saturation voltage Gain bandwidth product Collector output capacitance VCE(sat)
Notes: 2SB859 grouped hFE1 follows. Pulse test
Maximum Collector Dissipation Curve Collector power dissipation
Area Safe Operation (-10 max(Continuous) 25°C (-33 -1.0 -0.5
Collector current
-0.2 -0.1 (-80 -0.06 -0.05
Case temperature (°C)
-100 Collector emitter voltage
2SB859
Typical Output Characteristics 25°C
-160 -140 -120 -100
Typical Transfer Characteristcs Collector current -1.0 -0.3 -0.1 -0.03
Collector Current
Collector emitter voltage
-0.01 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base emitter voltage
Current Transfer Ratio Collector Current Collector emitter saturation voltage VCE(sat) 1,000 current transfer ratio -0.01 -0.03 -0.1 -0.3 -1.0 Collector current 75°C -1.0 -0.3 -0.1 -0.03
Collector Emitter Saturation Voltage Collector Current
75°C
75°C
-0.01 -0.01 -0.03 -0.1 -0.3 -1.0 Collector current
2SB859
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

Cautions Keep safety first your circuit designs! Renesas Technolo

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