Complementary Silicon Plastic Power Transistors designed general-
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Semiconductor
Complementary Silicon Plastic Power Transistors
designed general-purpose amplifier switching applications.
2N6107 2N6109 2N6111 2N6288
Current Gain Specified Amperes
30-150 2N6111, 2N6288 (Min) Devices Collector-Emitter Sustaining Voltage VCEO(sus) (Min) 2N6111, 2N6288 (Min) 2N6109 (Min) 2N6107, 2N6292 High Current Gain Bandwidth Product (Min) mAdc 2N6288, (Min) mAdc 2N6107, TO-220AB Compact Package
2N6292*
Semiconductor Preferred Device
AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30-50-70 VOLTS WATTS
*MAXIMUM RATINGS
Rating Symbol VCEO 2N6111 2N6288 2N6109 2N6107 2N6292 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation 25_C Derate above 25_C Operating Storage Junction Temperature Range 0.32 Watts W/_C Tstg +150
STYLE
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-09 TO-220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
Thermal Resistance, Junction Case *Indicates JEDEC Registered Data.
3.125
_C/W
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev.
Publication Order Number: 2N6107/D
2N6107 2N6109 2N6111 2N6288 2N6292
POWER DISSIPATION (WATTS)
CASE TEMPERATURE (°C)
Figure Power Derating
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Small-Signal Current Gain Adc, Vdc, kHz) *Indicates JEDEC Registered Data. Pulse Test: Pulse Width Duty Cycle 2.0%. |hfe| ftest.
*ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
Output Capacitance (VCB Vdc, MHz)
Current Gain Bandwidth Product mAdc, Vdc, ftest MHz)
Base-Emitter Voltage Adc, Vdc)
Collector-Emitter Saturation Voltage Adc, Adc)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VBE Vdc,
Collector Cutoff Current (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc, 150_C) (VCE Vdc, VEB(off) Vdc, 150_C) (VCE Vdc, VEB(off) Vdc, 150_C)
Collector Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc,
Collector-Emitter Sustaining Voltage mAdc,
Characteristic
2N6107 2N6109 2N6111 2N6288 2N6292
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2N6107, 2N6292 2N6109 2N6111, 2N6288 Devices 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6288, 2N6107, 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICEX mAdc mAdc mAdc µAdc Unit
2N6107 2N6109 2N6111 2N6288 2N6292
-9.0 DUTY CYCLE 1.0% SCOPE TIME 0.07 0.05 0.03 0.02 0.07 25°C IC/IB
VBE(off)
VARIED OBTAIN DESIRED CURRENT LEVELS
MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
COLLECTOR CURRENT (AMP)
Figure Switching Time Test Circuit
Figure Turn-On Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.07 0.05 0.03 0.02 0.01 0.01
0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 ZJC(t) r(t) 3.125°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) ZJC(t) TIME (ms) P(pk)
DUTY CYCLE, t1/t2
Figure Thermal Response
COLLECTOR CURRENT (AMPS)
CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT 25°C (SINGLE PULSE) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.15
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided J(pk) 150_C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
Figure Active-Region Safe Operating Area
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2N6107 2N6109 2N6111 2N6288 2N6292
0.07 0.05 0.07 25°C IC/IB CAPACITANCE (pF) 25°C
TIME
COLLECTOR CURRENT (AMP)
REVERSE VOLTAGE (VOLTS)
Figure Turn-Off Time
Figure Capacitance
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2N6107 2N6109 2N6111 2N6288 2N6292
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE
SEATING PLANE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 -0.080 MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 -2.04
STYLE BASE COLLECTOR EMITTER COLLECTOR
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2N6107 2N6109 2N6111 2N6288 2N6292
Notes
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2N6107 2N6109 2N6111 2N6288 2N6292
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2N6107/D
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